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Plasma Sci. Technol. ›› 2018, Vol. 20 ›› Issue (1): 14013-014013.doi: 10.1088/2058-6272/aa88b0

• 18届全国等离子体科学和技术会议 • 上一篇    下一篇

Development and experimental study of large size composite plasma immersion ion implantation device

Falun SONG (宋法伦)1, Fei LI (李飞)1, Mingdong ZHU (朱明冬)1,2, Langping WANG (王浪平)2, Beizhen ZHANG (张北镇)1, Haitao GONG (龚海涛)1,#br# Yanqing GAN (甘延青)1 and Xiao JIN (金晓)1   

  1. 1 Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP,Mianyang 621900, People’s Republic of China
    2 State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001,People’s Republic of China
  • 出版日期:2017-12-04 发布日期:2017-12-07

Development and experimental study of large size composite plasma immersion ion implantation device

Falun SONG (宋法伦)1, Fei LI (李飞)1, Mingdong ZHU (朱明冬)1,2, Langping WANG (王浪平)2, Beizhen ZHANG (张北镇)1, Haitao GONG (龚海涛)1,#br# Yanqing GAN (甘延青)1 and Xiao JIN (金晓)1   

  1. 1 Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP,Mianyang 621900, People’s Republic of China
    2 State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001,People’s Republic of China
  • Online:2017-12-04 Published:2017-12-07

Abstract:

Plasma immersion ion implantation (PIII) overcomes the direct exposure limit of traditional beamline ion implantation, and is suitable for the treatment of complex work-piece with large size. PIII technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PIII device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m3, and maximum vacuum degree is about 5×10−4 Pa. The density of RF plasma in homogeneous region is about 109 cm−3, and plasma density in the ion implantation region is about 1010 cm−3. This device can be used for large-size sample material PIII treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.

Key words: plasma immersion ion implantation, cathode arc metal plasma source, RF plasma source, surface modification

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