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Plasma Sci. Technol. ›› 2018, Vol. 20 ›› Issue (2): 25505-025505.doi: 10.1088/2058-6272/aa94bd

• 等离子体技术 • 上一篇    下一篇

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

  

  • 收稿日期:2017-09-01 出版日期:2018-01-11 发布日期:2017-10-19

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

Peiyu JI (季佩宇)1,2, Jun YU (於俊)1,2, Tianyuan HUANG (黄天源)1,2 , Chenggang JIN (金成刚)1,2, Yan YANG (杨燕)1,2, Lanjian ZHUGE (诸葛兰剑)1,3,4 and Xuemei WU (吴雪梅)1,2,4   

  1. 1 College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, People’s Republic of China 2 Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, People’s Republic of China 3 Analysis and Testing Center, Soochow University, Suzhou 215123, People’s Republic of China
  • Received:2017-09-01 Online:2018-01-11 Published:2017-10-19
  • Supported by:

    This work is supported by National Natural Science Foundation of China (Nos. 11175126, 11375126, 11435009, 11505123),the National Magnetic Confinement Fusion Program of China (Nos. 2014GB106005, 2010GB106000), a project funded by China Postdoctoral Science Foundation, and a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD).

Abstract:

A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μmh-1 at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and Hα radicals play an important role in the growth of DLC films. The results show that the Hα radicals are beneficial to the formation and stabilization of C=C bond from sp2 to sp3.

Key words: helicon wave plasma, diamond-like carbon film, sp3 content, Raman spectra

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