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Plasma Sci. Technol. ›› 2018, Vol. 20 ›› Issue (3): 035507.doi: 10.1088/2058-6272/aa9cdf

• Plasma Technology • Previous Articles     Next Articles

Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

Yuqing XIONG (熊玉卿)1 , Hengjiao GAO (高恒蛟)1, Ni REN (任妮)1 and Zhongwei LIU(刘忠伟)2   

  1. 1 Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, People’s Republic of China 2 Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, People’s Republic of China
  • Received:2017-08-09 Published:2017-11-23

Abstract:

Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N′-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

Key words: atomic layer deposition, copper, inner wall, waveguide, high aspect ratio