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LI Xiaochun (李小椿), LIU Yinan (刘亦男), YU Yi (余一), NIU Guojian (牛国鉴), LUO Guangnan (罗广南), SHU Xiaolin (舒小林). Molecular Statics Simulation of Hydrogen Defect Interaction in Tungsten[J]. Plasma Science and Technology, 2015, 17(6): 524-528. DOI: 10.1088/1009-0630/17/6/14
Citation: LI Xiaochun (李小椿), LIU Yinan (刘亦男), YU Yi (余一), NIU Guojian (牛国鉴), LUO Guangnan (罗广南), SHU Xiaolin (舒小林). Molecular Statics Simulation of Hydrogen Defect Interaction in Tungsten[J]. Plasma Science and Technology, 2015, 17(6): 524-528. DOI: 10.1088/1009-0630/17/6/14

Molecular Statics Simulation of Hydrogen Defect Interaction in Tungsten

  • Hydrogen (H) defect interactions have been investigated by molecular statics sim- ulations in tungsten (W), including H-H interactions and interactions between H and W self- interstitial atoms. The interactions between H and small H-vacancy clusters are also demonstrated; the binding energies of an H, a vacancy and a self-interstitial W to an H-vacancy cluster depend on the H-to-vacancy ratio. We conclude that H bubble formation needs a high concentration of H in W for the H bubble nucleation and growth, which are also governed by the H-to-vacancy ratio of the cluster. The vacancy first combines with H atoms and a cluster forms, then the H-vacancy cluster goes through the whole process of vacancy capture, H capture, and vacancy capture again, and as a result the H-vacancy cluster grows larger and larger. Finally, the H bubble forms.
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