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Plasma Sci. Technol. ›› 2018, Vol. 20 ›› Issue (3): 035504.doi: 10.1088/2058-6272/aa98d8

• Plasma Technology • Previous Articles     Next Articles

Pressure-controlled terahertz filter based on 1D photonic crystal with a defective semiconductor

Qinwen XUE (薛钦文)1, Xiaohua WANG (王晓华)1,2,3, Chenglin LIU (刘成林)1 and Youwen LIU (刘友文)2   

  1. 1 College of New Energy and Electronics Engineering, Yancheng Teachers University, Yancheng 224007, People’s Republic of China 2 College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People’s Republic of China
  • Received:2017-07-25 Published:2017-11-07
  • Supported by:

    This work was partially supported by National Natural Science Foundation of China (Grant Nos. 11174147, 11175152 and 11704326), the Funding of Jiangsu Innovation Program for Graduate Education (Grant No. KYLX15_0316) and the Fundamental Research Funds for the Central Universities.

Abstract:

The tunable terahertz (THz) filter has been designed and studied, which is composed of 1D photonic crystal (PC) containing a defect layer of semiconductor GaAs. The analytical solution of 1D defective PC (1DDPC) is deduced based on the transfer matrix method, and the electromagnetic plane wave numerical simulation of this 1DDPC is performed by using the finite element method. The calculated and simulated results have confirmed that the filtering transmittance of this 1DDPC in symmetric structure of air/(Si/SiO2)N/GaAs/(SiO2/Si)N/air is far higher than in asymmetric structure of air/(Si/SiO2)N/GaAs/(Si/SiO2)N/air, where the filtering frequency can be tuned by the external pressure. It can provide a feasible route to design the external pressure-controlled THz filter based on 1DPC with a defective semiconductor.

Key words: photonic crystal, semiconductor, THz, filter