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LI Xiaochun (李小椿), LIU Yinan (刘亦男), YU Yi (余一), NIU Guojian (牛国鉴), LUO Guangnan (罗广南), SHU Xiaolin (舒小林). Molecular Statics Simulation of Hydrogen Defect Interaction in TungstenJ. Plasma Science and Technology, 2015, 17(6): 524-528. DOI: 10.1088/1009-0630/17/6/14
Citation: LI Xiaochun (李小椿), LIU Yinan (刘亦男), YU Yi (余一), NIU Guojian (牛国鉴), LUO Guangnan (罗广南), SHU Xiaolin (舒小林). Molecular Statics Simulation of Hydrogen Defect Interaction in TungstenJ. Plasma Science and Technology, 2015, 17(6): 524-528. DOI: 10.1088/1009-0630/17/6/14

Molecular Statics Simulation of Hydrogen Defect Interaction in Tungsten

  • Hydrogen (H) defect interactions have been investigated by molecular statics sim- ulations in tungsten (W), including H-H interactions and interactions between H and W self- interstitial atoms. The interactions between H and small H-vacancy clusters are also demonstrated; the binding energies of an H, a vacancy and a self-interstitial W to an H-vacancy cluster depend on the H-to-vacancy ratio. We conclude that H bubble formation needs a high concentration of H in W for the H bubble nucleation and growth, which are also governed by the H-to-vacancy ratio of the cluster. The vacancy first combines with H atoms and a cluster forms, then the H-vacancy cluster goes through the whole process of vacancy capture, H capture, and vacancy capture again, and as a result the H-vacancy cluster grows larger and larger. Finally, the H bubble forms.
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