LIU bo (刘波), YANG JiJun (杨吉军), JIAO Guohua (焦国华), XU KeWei (徐可为). Improvement of Interfacial Adhesion Strength and Thermal Stability of Cu/p-SiC:H/SiOC:H Film Stack by Plasma Treatment on the Surface of Cu Film[J]. Plasma Science and Technology, 2012, 14(7): 619-623. DOI: 10.1088/1009-0630/14/7/12
Citation:
LIU bo (刘波), YANG JiJun (杨吉军), JIAO Guohua (焦国华), XU KeWei (徐可为). Improvement of Interfacial Adhesion Strength and Thermal Stability of Cu/p-SiC:H/SiOC:H Film Stack by Plasma Treatment on the Surface of Cu Film[J]. Plasma Science and Technology, 2012, 14(7): 619-623. DOI: 10.1088/1009-0630/14/7/12
LIU bo (刘波), YANG JiJun (杨吉军), JIAO Guohua (焦国华), XU KeWei (徐可为). Improvement of Interfacial Adhesion Strength and Thermal Stability of Cu/p-SiC:H/SiOC:H Film Stack by Plasma Treatment on the Surface of Cu Film[J]. Plasma Science and Technology, 2012, 14(7): 619-623. DOI: 10.1088/1009-0630/14/7/12
Citation:
LIU bo (刘波), YANG JiJun (杨吉军), JIAO Guohua (焦国华), XU KeWei (徐可为). Improvement of Interfacial Adhesion Strength and Thermal Stability of Cu/p-SiC:H/SiOC:H Film Stack by Plasma Treatment on the Surface of Cu Film[J]. Plasma Science and Technology, 2012, 14(7): 619-623. DOI: 10.1088/1009-0630/14/7/12
1 Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China 2 State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, CAS, Xi’an 710049, China 3 State-key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Funds: supported by National Natural Science Foundation of China (Nos.11075112,61040034) and Specialized Reseach Fund for the Doctoral Program of Higher Education(New Teachers, No. 20100181120112)
A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC:H (p-SiC:H) capping barrier (k=3.3) has been developed in the present work. With the introduction of self-aligned barrier (SAB) CuSiN between a Cu film and a p-SiC:H capping barrier, the interfacial thermal stability and the adhesion of the Cu/p-SiC:H film are considerably enhanced. A significant improvement of adhesion strength and thermal stability of Cu/p-SiC:H/SiOC:H film stack has been achieved by optimizing the pre-clean step before cap-layer deposition and by forming the CuSiN-like phase. This cap layer on the surface of the Cu can provide a more cohesive interface and effectively suppress Cu atom migration as well. Keyword: interfacial adhesion; thermal stability; self-aligned CuSiN process; diffusion barrier
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