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Yao Xueling (姚学玲), Chen Jingliang (陈景亮). An Active Triggered Surge Protective Gap[J]. Plasma Science and Technology, 2012, 14(8): 759-764. DOI: 10.1088/1009-0630/14/8/14
Citation: Yao Xueling (姚学玲), Chen Jingliang (陈景亮). An Active Triggered Surge Protective Gap[J]. Plasma Science and Technology, 2012, 14(8): 759-764. DOI: 10.1088/1009-0630/14/8/14

An Active Triggered Surge Protective Gap

Funds: supported by the New Century Talent Foundation of Ministry of Education(NCET-08-0438)
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  • Received Date: January 16, 2011
  • A triggered surge protective device is designed and its discharge characteristics are studied. The experimental results show that the triggered surge protective device has excellent surge protective characteristics. When the gap distance is 5 mm, p?d is 90 Pa?mm and without an active energy trigger circuit, the DC breakdown voltage of the triggered surge protective device is 2.32 kV and the pulse breakdown voltage is 5.75 kV. Therefore, the pulse voltage ratio, which is defined as the specific value of pulse breakdown voltage and DC breakdown voltage, is 2.48. With a semiconductor ZnO flashover trigger device and an active energy coupling trigger circuit, the pulse breakdown voltage can be reduced to 3.32 kV, the pulse voltage ratio is 1.43 and the response time is less than 100 ns. These results are helpful in laying a theoretical foundation for further studies on triggered surge protective devices.
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