X-Ray Diffraction Study of Plasma Exposed and Annealed AlSb Bilayer Thin Film

Aluminum antimony seems to be a promising semiconducting material for high temperature applications, especially for transistors and P-N junction diodes. Additionally, it is a highly efficient solar material. This paper discusses the plasma induced bilayer diffusion of AlSb bilayer thin films using X-ray diffractogram. AlSb bilayer thin films were prepared on a glass substrate by vacuum evaporation technique. The effect of plasma exposure time and annealing temperature on the micro-structural parameters were investigated. X-ray diffraction studies show that the cubic crystals of Al orient along the (111) plane and the hexagonal crystals of Sb orient along the (003) plane. Newly formed cubic crystals of AlSb are oriented along the (200) plane and they are formed due to the simultaneous growth of Al and Sb crystals during plasma exposure.