Deposition of Ti-Al-N Films by Using a Cathodic Vacuum Arc with Pulsed Bias

ZHANG Guoping (张国平); WANG Xingquan (王兴权); LV Guohua (吕国华); et al

doi:10.1088/1009-0630/15/6/10

Plasma Science and Technology > 2013 > 15(6): 542-545. > DOI: 10.1088/1009-0630/15/6/10

ZHANG Guoping (张国平), WANG Xingquan (王兴权), LV Guohua (吕国华), et al. Deposition of Ti-Al-N Films by Using a Cathodic Vacuum Arc with Pulsed Bias[J]. Plasma Science and Technology, 2013, 15(6): 542-545. DOI: 10.1088/1009-0630/15/6/10

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Deposition of Ti-Al-N Films by Using a Cathodic Vacuum Arc with Pulsed Bias

Institute of Physics, Chinese Academy of Science, Beijing 100080, China

Funds: supported financially by National Natural Science Foundation of China (No. 10735090), the National Magnetic Confinement Fusion Science Program (No. 2009GB106004) and Scientific and Technological Project of Beijing

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Received Date: November 16, 2011

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Abstract

Abstract

Ti-Al-N hard films have been prepared by cathodic arc deposition by using an unipo- lar pulsed bias. In the present study, Ti-Al-N ¯lms were deposited on stainless steel and silicon wafers. The deposition rate, micrograph, preferred orientation and composition were systemati- cally investigated by usingx-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), and a scanning electron microscope (SEM). It is shown that substate bias duty cycle and frequency have a great effect on film structure. A simple explanation for the results is also presented.
- cathodic vacuum arc,
- Ti-Al-N film,
- pulsed bias

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