Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation

GAO Huanzhong (高欢忠); HE Long (何龙); HE Zhijiang (何志江); LI Zebin (李泽斌); et al.

doi:10.1088/1009-0630/15/8/14

Plasma Science and Technology > 2013 > 15(8): 791-793. > DOI: 10.1088/1009-0630/15/8/14

GAO Huanzhong (高欢忠), HE Long (何龙), HE Zhijiang (何志江), LI Zebin (李泽斌), et al.. Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation[J]. Plasma Science and Technology, 2013, 15(8): 791-793. DOI: 10.1088/1009-0630/15/8/14

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Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation

Department of Illuminating Engineering and Light Sources, Institute for Electric Light Sources, Fudan University, Shanghai 200433, China

Funds: supported by National Natural Science Foundation of China (Nos.11005021, 51177017 and 11175049)

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Received Date: April 08, 2012

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Abstract

Abstract

Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
- plasma immersion ion implantation,
- surface treatment,
- work function,
- indium tin oxide

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