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QU Hongpeng (曲洪鹏). Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands[J]. Plasma Science and Technology, 2013, 15(9): 852-856. DOI: 10.1088/1009-0630/15/9/03
Citation: QU Hongpeng (曲洪鹏). Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands[J]. Plasma Science and Technology, 2013, 15(9): 852-856. DOI: 10.1088/1009-0630/15/9/03

Ion-Banana-Orbit-Width Effect on Bootstrap Current for Small Magnetic Islands

  • A simple and direct theoretical method has been proposed to investigate the so- called ion-banana-orbit-width (IBW) effect on the bootstrap current in the region of magnetic islands generated by the neoclassical tearing mode (NTM). The result shows that, when the IBW approaches the island width, the (ion) bootstrap current can be partly restored inside the island while the pressure profile is flattened. This can lead to the reduction of the bootstrap current drive on the NTM. The strength of the IBW effect on the NTM is related to the safety factor and the inverse aspect ratio on the rational surface.
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