Effect of Addition of Nitrogen to a Capacitively Radio-Frequency Hydrogen Discharge

ZHANG Lianzhu(张连珠); YAO Fubao(姚福宝); ZHAO Guoming(赵国明); HAO Yingying(郝莹莹); SUN Qian(孙倩)

doi:10.1088/1009-0630/16/3/06

Plasma Science and Technology > 2014 > 16(3): 203-210. > DOI: 10.1088/1009-0630/16/3/06

ZHANG Lianzhu(张连珠), YAO Fubao(姚福宝), ZHAO Guoming(赵国明), HAO Yingying(郝莹莹), SUN Qian(孙倩). Effect of Addition of Nitrogen to a Capacitively Radio-Frequency Hydrogen Discharge[J]. Plasma Science and Technology, 2014, 16(3): 203-210. DOI: 10.1088/1009-0630/16/3/06

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Effect of Addition of Nitrogen to a Capacitively Radio-Frequency Hydrogen Discharge

College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024, China

Funds: supported by the Natural Science Foundation of Hebei Province, China (No.A2012205072)

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Received Date: May 09, 2012

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Abstract

Abstract

A hybrid PIC/MC model is developed in this work for H ₂ -xN ₂ capacitively coupled radio–frequency (CCRF) discharges in which we take into account 43 kinds of collisions reaction processes between charged particles (e⁻, H⁺₃, H ⁺₂, H ⁺, N⁺₂, N⁺ ) and ground-state molecules (H ₂, N ₂ ). In addition, the mean energies and densities of electrons and ions (H + 3, H + 2, H + ), and electric field distributions in the H ₂ -N ₂ CCRF discharge are simulated by this model. Furthermore, the effects of addition of a variable percentage of nitrogen (0-30%) into the H₂ discharge on the plasma processes and discharge characteristics are studied. It is shown that by increasing the percentage of nitrogen added to the system, the RF sheath thickness will narrow, the sheath electric field will be enhanced, and the mean energy of hydrogen ions impacting the electrodes will be increased. Because the electron impact ionization and dissociative ionization rates increase when N₂ is added to the system, the electron mean density will increase while the electron mean energy and hydrogen ion density near the electrodes will decrease. This work aims to provide a theoretical basis for experimental studies and technological developments with regard to H ₂ -N ₂ CCRF plasmas.
- H ₂ -N ₂capacitively coupled radio-frequency discharge,
- H ₂ plasma,
- PIC/MC simulation

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References (22)

References

1 Dorner Reisel A, Kubler L, Irmer G, et al. 2005, Dia-mond Related Materials, 14: 1073;

2 Chen S T, Chen G S, Yang T J, et al. 2003, Elec-trochem. Solid-State Lett., 6: F4;

3 Nagai H, Hiramatsu M, Hori M, et al. 2003, Jpn. J.Appl. Phys., 42: L212;

4 van Helden J H,Wagemans W, Yagci G. 2007, J. Appl.Phys., 101: 043305;

5 Hirohata Y, Tsuchiya N, Hino T. 2001, Appl. Surf.Sci., 169: 612;

6 Tatarova E, Dias F M, Gordiets B, et al. 2005, Plasma Sources Sci. Technol., 14: 19;

7 Gordiets B, Ferrira C M, Pinheiro M J, et al. 1998,Plasma Sources Sci. Technol., 7: 363;

8 Gordiets B, Ferrira C M, Pinheiro M J, et al. 1998,Plasma Sources Sci. Technol., 7: 379;

9 Zhang L Z, Gao S X. 2006, Acta. Phys. Sin., 55: 3524 (in Chinese) Plasma Science and Technology, Vol.16, No.3, Mar. 2014;

10 Nunomura S, Kondo M. 2007, J. Appl. Phys., 102:093306;

11 Zhao S X, Zhang L Z. 2009, Nuclear Fusion and Plasma Physics, 29: 39 (in Chinese) ;

12 Nanbu K. 2000, IEEE Transactions on Plasma Sci.,28: 917;

13 Michael A Lieberman, Allan J Lichtenberg. 2006, Prin-ciples of Plasma Discharges and Materials Processing.Science Press, Beijing, p.46 (in Chinese) ;

14 Itikawa Y, Hayshi M, Ichimura A. 1986, J. Phys.Chem. Ref. Data, 15: 985;

15 Itikawa Y. 2006, J. Phys. Chem. Ref. Data, 35: 53;

16 Bogaerts A, Gijbels R. 2002, Spectrochimica Acta B,57: 1071;

17 Itikawa Y, Yoon J S, Song M Y, et al. 2008, J. Phys.Chem. Ref. Data, 37: 913;

18 Phelps A V. 1991, J. Phys. Chem. Ref. Data, 20: 557;

19 Tosi P, Dmitrijev O, Bassi D. 1992, J. Chem. Phys.,97: 3333;

20 Phelps A V. 1990, J. Phys. Chem. Ref. Data, 19: 653;

21 Phelps A V. 2009, Phys. Rev. E, 79: 066401;

22 Simko T, Martisovits V. 1997, Phys. Rev. E, 56: 5908

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