Feature Scale Simulation of PECVD of SiO ₂ in SiH ₄ /N ₂ O Mixture

In this paper, to simulate the process of PECVD (plasma enhanced chemical vapor deposition) of SiO 2, the plasma chemistry and plasma density of SiH ₄ /N ₂ O mixture have been studied with an inductive coupled plasma model, and the level set methodology has been used to obtain the feature scale variation during the process. In this simulation, the goal is to fill a trench. We studied how ion sputtering and chamber pressure affect the feature scale model. After the simulation, we found that the trench will close up at the top after a few steps, and if we add the ion sputtering into the surface reactions, the trench top will close up a little later. When the chamber pressure is improved, the plasma density will increase, so the trench top will close up earlier. In semiconductor device manufacture, people can control the trench’s feature scale through adjusting these two parameters.