High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

CHEN Jiuxiang(陈玖香); WANG Weizhong(王伟仲); Jyh Shiram CHERNG; CHEN Qiang(陈强)

doi:10.1088/1009-0630/16/5/10

Plasma Science and Technology > 2014 > 16(5): 502-505. > DOI: 10.1088/1009-0630/16/5/10

CHEN Jiuxiang(陈玖香), WANG Weizhong(王伟仲), Jyh Shiram CHERNG, CHEN Qiang(陈强). High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas[J]. Plasma Science and Technology, 2014, 16(5): 502-505. DOI: 10.1088/1009-0630/16/5/10

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High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

1 Lab of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China 2 Department of Materials Engineering, Mingchi University of Technology, Taipei 24301, Taiwan

Funds: supported by National Natural Science Foundation of China (Nos. 11175024, 11375031), 2011BAD24B01, KM 201110015008, KM 201010015005, BIGC Key Project (No. 23190113051) and PHR20110516, PHR201107145

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Received Date: December 05, 2012

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Abstract

Abstract

The plasma parameters in ICP-CVD system with internal low inductance antennas (LIA) were diagnosed by Langmuir probe. The ions density (N_i ) reached 10 ¹¹ -10¹² cm ⁻³, and the electron temperature (T _e ) was below ca. 2 eV, which was slightly decreased with applied power. A p-type hydrogenated microcrystalline silicon (µc-Si:H) film was prepared on glass substrate. After optimization of the processing parameters in flow ratio of SiH ₄ :B₂ H ₆ :H ₂, a high quality µc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.
- ICP-CVD,
- plasma parameters,
- microcrystalline silicon films,
- deposition rate

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References (15)

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