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MA Zhibin (马志斌), WU Jun (吴俊), TAN Bisong (谭必松), SHEN Wulin (沈武林), PAN Xin (潘鑫), WANG Jianhua (汪建华). Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas[J]. Plasma Science and Technology, 2015, 17(4): 294-297. DOI: 10.1088/1009-0630/17/4/06
Citation: MA Zhibin (马志斌), WU Jun (吴俊), TAN Bisong (谭必松), SHEN Wulin (沈武林), PAN Xin (潘鑫), WANG Jianhua (汪建华). Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas[J]. Plasma Science and Technology, 2015, 17(4): 294-297. DOI: 10.1088/1009-0630/17/4/06

Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas

  • In order to precisely measure the ion parameters in a microwave electron cyclotron resonance plasma using an ion sensitive probe, the dependences of the current-voltage (I-V ) characteristics on the shielding height (h) and the potential difference between inner and outer electrodes (V B ) have been investigated at different working pressures of 0.03 Pa and 0.8 Pa. Results show that the I-V curves at higher pressure are more sensitive to the variation of h than those at lower pressure. The influence of V B on ion temperature (T i ) measurement becomes more prominent when the pressure is increased from 0.03 Pa to 0.8 Pa. Under both pressures, the optimized h is obtained at the condition where the current reaches zero in the positive voltage region with a suitable V B of −1.5 V because of effective shielding of the electron E×B drift.
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