1 Christophorou L, Olthoff J, Van Brunt R. 1997, IEEE Electr. Insul. Mag., 13: 20 2 Hernandez-Avila J L, Basurto E, De Urquijo J. 2002, J.Phys. D: Appl. Phys., 35: 2264 3 Wang W, Murphy A B, Rong M Z, et al. 2013, J. Appl.Phys., 114: 103301 4 Li X, Zhao H, Jia S, et al. 2013, J. Appl. Phys., 114:053302 5 Dahl D A, Franck C M. 2013, J. Phys. D: Appl. Phys.,46: 445202 6 De Urquijo J, Mitrani A, Ruiz-Vargas G, et al. 2011, J.Phys. D: Appl. Phys., 44: 342001 7 Basurto E, Hernandez-Avila J, Juarez A, et al. 2013, J.Phys. D: Appl. Phys., 46: 355207 8 Stoller P C, Seeger M, Iordanidis A A, et al. 2013, IEEE Trans. Plasma Sci., 41: 8 9 Wang W Z, Rong M Z, Wu Y, et al. 2014, J. Phys. D:Appl. Phys., 47: 255201 10 Tanaka Y, Yamachi N, Matsumoto S, et al. 2008, Electrical Engineering in Japan, 163: 4 11 www.ABB.com/highvoltage 12 Kurihara M, Petrovic Z, Makabe T. 2000, J. Phys. D:Appl. Phys., 33: 2146 13 www.lxcat.net 14 Wang W Z, Tu X, Mei D H, et al. 2013, Phys. Plasmas,20: 113503 15 Pitchford L C. 2013, J. Phys. D: Appl. Phys., 46: 330301 16 Alves L L, Bartschat K, Biagi S F, et al. 2013, J. Phys.D: Appl. Phys., 46: 334002 17 Sun H, Rong M Z, Wu Y, et al. 2015, J. Phys. D: Appl.Phys., 48: 055201 18 Davies D K. 1978, J. Appl. Phys., 49: 127 19 Alger S R, Rees J A. 1976, J. Phys. D, 9: 2359 20 Conti J, Williams A W. 1975, J. Phys. D, 8: 2198 21 Risbud A V, Naidu M S. 1978, Indian J. Pure Appl.Phys., 16: 32 22 Kucukarpaci H N, Lucas J. 1979, J. Phys. D, 12: 2123 23 Hake R D, Phelps A V. 1967, Phys. Rev., 158: 70 24 Price D A, Lucas J, Moruzzi J L. 1972, J. Phys. D, 5:1249 25 Lawton S A, Phelps A V. 1978, J. Chem. Phys., 69:1055 26 Folkard M A and Haydon S C. 1973, J. Phys. B: At.Mol. Opt. Phys., 6: 214 27 Daniel T N and Harris F M. 1970, J. Phys. B: At. Mol.Opt. Phys., 3: 363 28 Christophorou L G, Olthoff J K. 1999, J. Phys. Chem.Ref. Data, 28: 967
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