A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas

SUI Jiaxing (眭佳星); ZHANG Saiqian (张赛谦); LIU Zeng (刘增); YAN Jun (阎军); DAI Zhongling (戴忠玲)

doi:10.1088/1009-0630/18/6/14

Plasma Science and Technology > 2016 > 18(6): 666-673. > DOI: 10.1088/1009-0630/18/6/14

SUI Jiaxing (眭佳星), ZHANG Saiqian (张赛谦), LIU Zeng (刘增), YAN Jun (阎军), DAI Zhongling (戴忠玲). A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas[J]. Plasma Science and Technology, 2016, 18(6): 666-673. DOI: 10.1088/1009-0630/18/6/14

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A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas

1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China 2Department of Engineering Mechanics, Dalian University of Technology, Dalian 116024, China

Funds: supported by National Natural Science Foundation of China (No. 11375040) and the Important National Science & Technology Specific Project of China (No. 2011ZX02403-002)

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Received Date: July 05, 2015

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Abstract

Abstract

A multi-scale numerical method coupled with the reactor, sheath and trench model is constructed to simulate dry etching of SiO₂ in inductively coupled C₄F₈plasmas. Firstly, ion and neutral particle densities in the reactor are decided using the CFD-ACE+ commercial software. Then, the ion energy and angular distributions (IEDs and IADs) are obtained in the sheath model with the sheath boundary conditions provided with CFD-ACE+. Finally, the trench profile evolution is simulated in the trench model. What we principally focus on is the effects of the discharge parameters on the etching results. It is found that the discharge parameters, including discharge pressure, radio-frequency (rf) power, gas mixture ratios, bias voltage and frequency, have synergistic effects on IEDs and IADs on the etched material surface, thus further affecting the trench profiles evolution.
- plasma etching,
- multi-scale model,
- trench profile,
- surface process

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References

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