Growth of 4″ diameter polycrystalline diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition

A F POPOVICH; V G RALCHENKO; V K BALLA; A K MALLIK; A A KHOMICH; A P BOLSHAKOV; D N SOVYK; E E ASHKINAZI; V Yu YUROV

doi:10.1088/2058-6272/19/3/035503

Plasma Science and Technology > 2017 > 19(3): 35503-035503. > DOI: 10.1088/2058-6272/19/3/035503

A F POPOVICH, V G RALCHENKO, V K BALLA, A K MALLIK, A A KHOMICH, A P BOLSHAKOV, D N SOVYK, E E ASHKINAZI, V Yu YUROV. Growth of 4″ diameter polycrystalline diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2017, 19(3): 35503-035503. DOI: 10.1088/2058-6272/19/3/035503

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Growth of 4″ diameter polycrystalline diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition

1 Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Fryazino 141190, Russia 2 General Physics Institute of Russian Academy of Sciences, Moscow 119991, Russia 3 Harbin Institute of Technology, Harbin 150001, People’s Republic of China 4 National Research Nuclear University MEPhI, Moscow 115409, Russia 5 Central Glass and Ceramic Research Institute, Kolkata 700 032, India

Funds: This work was supported by the Russian Ministry of Education and Science (RMES), Agreement No. 14.613.21.0021, unique ID No. RFMEFI61314X0021 and the Department of Science & Technology (DST), India, grant No. GAP0246 under the joint RMES–DST Research Collaboration Agreement ‘Development of large size polycrystalline CVD diamond material for optical windows and support rods in high power microwave tubes’.

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Received Date: June 08, 2016

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Abstract

Abstract

Polycrystalline diamond (PCD)films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition (MPCVD) at different process parameters, and their thermal conductivity (TC)is evaluated by a laser flash technique (LFT)in the temperature range of 230–380 K. The phase purity and quality of the films are assessed by micro-Raman spectroscopy based on the diamond Raman peak width and the amorphous carbon (a-C)presence in the spectra. Decreasing and increasing dependencies for TC with temperature are found for high and low quality samples, respectively. TC, as high as 1950±230 W m⁻¹K⁻¹ at room temperature, is measured for the most perfect material. A linear correlation between the TC at room temperature and the fraction of the diamond component in the Raman spectrum for the films is established.
- thermal conductivity,
- polycrystalline diamond,
- microwave plasma chemical vapor deposition,
- Raman spectroscopy

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References (39)

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