Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50kHz/ 33MHz dual-frequency atmospheric-pressure plasma jet

The deposition of organosilicone thin films from hexamethyldisiloxane ( HMDSO) by using a dual-frequency ( 50 kHz/33 MHz) atmospheric-pressure micro-plasma jet with an admixture of a small volume of HMDSO and Ar was investigated. The topography was measured by using scanning electron microscopy. The chemical bond and composition of these films were analyzed by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy. The results indicated that the as-deposited film was constituted by silicon, carbon, and oxygen elements, and FTIR suggested the films are organosilicon with the organic component (–CH_x) and hydroxyl functional group(–OH) connected to the Si–O–Si backbone. Thin-film hardness was recorded by an MH–5–VM Digital Micro-Hardness Tester. Radio frequency power had a strong impact on film hardness and the hardness increased with increasing power.