Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering

Min ZHU (朱敏); Chao YE (叶超); Xiangying WANG (王响英); Amin JIANG (蒋阿敏); Su ZHANG (张苏)

doi:10.1088/2058-6272/aae7dd

Plasma Science and Technology > 2019 > 21(1): 15507-015507. > DOI: 10.1088/2058-6272/aae7dd

Min ZHU (朱敏), Chao YE (叶超), Xiangying WANG (王响英), Amin JIANG (蒋阿敏), Su ZHANG (张苏). Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering[J]. Plasma Science and Technology, 2019, 21(1): 15507-015507. DOI: 10.1088/2058-6272/aae7dd

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Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering

¹ School of Physics Science and Technology, Soochow University, Suzhou 215006, People’s Republic of China
² Key Laboratory of Thin Films of Jiangsu Province, Soochow University, Suzhou 215006, People’s Republic of China
³ Medical College, Soochow University, Suzhou 215123, People’s Republic of China

Funds: The work was supported by National Natural Science Foundation of China (Nos. 11675118 and 11275136).

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Received Date: June 10, 2018

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Abstract

The effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron discharge was investigated. The ion velocity distribution function (IVDF), the maximum ion energy and ion flux density were measured at the substrate by a retarding field energy analyzer. The sputtering behavior was investigated by the electric characteristics of target and bias discharges using voltage–current probe technique. It was found that the substrate bias led to the decrease of sputtering power, voltage and current with the amplitude <7.5%. The substrate bias also led to the broadening of IVDFs and the increase of ion flux density, made the energy divergent of ions impacting the substrate. This effect was further enhanced by increasing bias power and reducing discharge pressure.
- RF magnetron sputtering,
- RF substrate bias,
- ion property,
- electric characteristic

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