Preparation of N-doped graphite oxide for supercapacitors by NH<sub>3</sub> cold plasma

Yufa ZHOU; Jingsen ZHANG; Guangqing XIA; Yue HUA; Yanqin LI; Jixiang HU; Xiuling ZHANG; Lanbo DI

doi:10.1088/2058-6272/ac48e0

Plasma Science and Technology > 2022 > 24(4): 044008. > DOI: 10.1088/2058-6272/ac48e0

Yufa ZHOU, Jingsen ZHANG, Guangqing XIA, Yue HUA, Yanqin LI, Jixiang HU, Xiuling ZHANG, Lanbo DI. Preparation of N-doped graphite oxide for supercapacitors by NH₃ cold plasma[J]. Plasma Science and Technology, 2022, 24(4): 044008. DOI: 10.1088/2058-6272/ac48e0

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Preparation of N-doped graphite oxide for supercapacitors by NH₃ cold plasma

1.
College of Physical Science and Technology, Dalian University, Dalian 116622, People’s Republic of China
2.
State Key Laboratory of Fine Chemicals, College of Chemical Engineering, Dalian University of Technology, Dalian 116024, People’s Republic of China
3.
State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, People’s Republic of China
4.
Key Laboratory of Advanced Technology for Aerospace Vehicles of Liaoning Province, Dalian University of Technology, Dalian 116024, People’s Republic of China

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Corresponding author:
Xiuling ZHANG, E-mail: xiulz@sina.com

Lanbo DI, E-mail: dilanbo@163.com
Received Date: September 12, 2021
Revised Date: January 03, 2022
Accepted Date: January 05, 2022
Available Online: December 15, 2023
Published Date: April 05, 2022

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Abstract

Abstract

In this work, N-doped graphite oxide (GO-P) was prepared by cold plasma treatment of GO using a mixture of NH₃ and Ar as the working gas. When the ratios of NH₃: Ar were 1:2, 1:3, and 1:4, the specific capacitances of the GO-P(NH₃: Ar = 1:2), GO-P(NH₃: Ar = 1:3), and GO-P(NH₃: Ar = 1:4) were 124.5, 187.7, and 134.6 F·g^-1, respectively, which were 4.7, 7.1, and 5.1 times that of GO at the current density of 1 A·g^-1. The capacitance retention of the GO-P(NH₃: Ar = 1:3) was 80% when it was cycled 1000 times. The characterization results showed that the NH₃ cold plasma could effectively produce N-doped GO and generate more active defects. The N/C ratio and the contents of pyridinic nitrogen and graphitic nitrogen of the GO-P(NH₃: Ar = 1:3) were the highest. These were conducive to providing pseudocapacitance and reducing the internal resistance of the electrode. In addition, the I_D/I_G of the GO-P(NH₃: Ar = 1:3) (1.088) was also the highest, indicating the highest number of defects. The results of discharge parameters measurement and in situ optical emission spectroscopy diagnosis of NH₃ plasma showed that the discharge is the strongest when the ratio of NH₃: Ar was 1:3, thereby the generated nitrogen active species can effectively promote N-doping. The N-doping and abundant defects were the keys to the excellent electrochemical performance of the GO-P(NH₃: Ar = 1:3). NH₃ cold plasma is a simple and rapid method to prepare N-doped GO and regulate the N-doping to prepare high-performance supercapacitors.
- NH₃ cold plasma,
- N-doping,
- graphite oxide,
- supercapacitor

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Acknowledgments

This work is supported by National Natural Science Foundation of China (Nos. 52077024, 21773020, 21673026, 11505019), State Key Laboratory of Structural Analysis for Industrial Equipment, and Dalian University of Technology (No. GZ21105).

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Preparation of N-doped graphite oxide for supercapacitors by NH₃ cold plasma

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