Effects of the electric field at the edge of a substrate to deposit a Ø100 mm uniform diamond film in a 2.45 GHz MPCVD system

Kang AN; Shuai ZHANG; Siwu SHAO; Jinlong LIU; Junjun WEI; Liangxian CHEN; Yuting ZHENG; Qing LIU; Chengming LI

doi:10.1088/2058-6272/ac4deb

Plasma Science and Technology > 2022 > 24(4): 045502. > DOI: 10.1088/2058-6272/ac4deb

Kang AN, Shuai ZHANG, Siwu SHAO, Jinlong LIU, Junjun WEI, Liangxian CHEN, Yuting ZHENG, Qing LIU, Chengming LI. Effects of the electric field at the edge of a substrate to deposit a Ø100 mm uniform diamond film in a 2.45 GHz MPCVD system[J]. Plasma Science and Technology, 2022, 24(4): 045502. DOI: 10.1088/2058-6272/ac4deb

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Effects of the electric field at the edge of a substrate to deposit a Ø100 mm uniform diamond film in a 2.45 GHz MPCVD system

1.
Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
2.
Shunde Graduate School, University of Science and Technology Beijing, Foshan 528399, People's Republic of China
3.
State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, Beijing 100083, People's Republic of China

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Corresponding author:
Kang AN, E-mail: ank_diamond@163.com

Chengming LI, E-mail: chengmli@mater.ustb.edu.cn
⁴ Kang AN and Shuai ZHANG contribute equally to this article and can be considered as co-first author.
Received Date: August 26, 2021
Revised Date: January 20, 2022
Accepted Date: January 21, 2022
Available Online: December 15, 2023
Published Date: March 29, 2022

Graphical Abstract

Abstract

Abstract

In this study, uniform diamond films with a diameter of 100 mm were deposited in a 15 kW/2.45 GHz ellipsoidal microwave plasma chemical vapour deposition system. A phenomenological model previously developed by our group was used to simulate the distribution of the electric strength and electron density of plasma. Results indicate that the electric field in the cavity includes multiple modes, i.e. TM₀₂ and TM₀₃. When the gas pressure exceeds 10 kPa, the electron density of plasma increases and plasma volume decreases. A T-shaped substrate was developed to achieve uniform temperature, and the substrate was suspended in air from Ø70 to 100 mm, thus eliminating vertical heat dissipation. An edge electric field was added to the system after the introduction of the T-shaped substrate. Moreover, the plasma volume in this case was greater than that in the central electric field but smaller than that in the periphery electric field of the TM₀₂ mode. This indicates that the electric field above and below the edge benefits the plasma volume rather than the periphery electric field of the TM₀₂ mode. The quality, uniformity and surface morphology of the deposited diamond films were primarily investigated to maintain substrate temperature uniformity. When employing the improved substrate, the thickness unevenness of the Ø100 mm diamond film decreased from 22% to 7%.
- MPCVD,
- 2.45 GHz,
- diamond film,
- plasma,
- simulation

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Acknowledgments

This work was sponsored by National Key Research and Development Program of China (No. 2019YFE03100200), National Natural Science Foundation of China (No. 5210020483), Postdoc Research Foundation of Shunde Graduate School of University of Science and Technology Beijing (No. 2020BH015) and Fundamental Research Funds for the Central Universities (No. FRF-MP-20-48). The authors are very grateful for their financial support.

Supplementary material for this article is available https://doi.org/10.1088/2058-6272/ac4deb

References (29)

References

[1]	Xu P et al 2020 Plasma Sci. Technol. 22 125601 doi: 10.1088/2058-6272/aba512
[2]	Schreck M et al 2017 Sci. Rep. 7 44462 doi: 10.1038/srep44462
[3]	Liang Y F et al 2021 Diam. Rel. Mater. 117 108461 doi: 10.1016/j.diamond.2021.108461
[4]	Herlinger J 2006 Thin Solid Films 501 65 doi: 10.1016/j.tsf.2005.07.108
[5]	Zimmer J W, Chandler G and Sharda T 2008 Thin Solid Films 516 696 doi: 10.1016/j.tsf.2007.06.050
[6]	Kozue K et al 2013 Plasma Sci. Technol. 15 89 doi: 10.1088/1009-0630/15/2/01
[7]	Guo J C et al 2016 Appl. Surf. Sci. 370 237 doi: 10.1016/j.apsusc.2016.02.158
[8]	An K et al 2015 Vacuum 117 112 doi: 10.1016/j.vacuum.2015.04.023
[9]	Su J J et al 2013 Development of cylinderical cavity type microwave plasma CVD reactor for diamond films deposition 19th IEEE Pulsed Power Conf. (PPC) (San Francisco: IEEE) p 1
[10]	Yu S W et al 2016 J. Phys. D: Appl. Phys. 49 355202 doi: 10.1088/0022-3727/49/35/355202
[11]	Li Y F et al 2014 Diam. Relat. Mater. 44 88 doi: 10.1016/j.diamond.2014.02.010
[12]	Vikharev A L et al 2018 Diam. Relat. Mater. 83 8 doi: 10.1016/j.diamond.2018.01.011
[13]	Weng J et al 2018 Vacuum 147 134 doi: 10.1016/j.vacuum.2017.10.026
[14]	Zuo S S et al 2008 Diam. Relat. Mater. 17 300 doi: 10.1016/j.diamond.2007.12.069
[15]	Silva F et al 2009 J. Phys. : Condens. Matt. 21 364202 doi: 10.1088/0953-8984/21/36/364202
[16]	Hassouni K, Silva F and Gicquel A 2010 J. Phys. D: Appl. Phys. 43 153001 doi: 10.1088/0022-3727/43/15/153001
[17]	Weng J et al 2012 Diam. Relat. Mater. 30 15 doi: 10.1016/j.diamond.2012.09.007
[18]	Gu Y J et al 2012 Diam. Relat. Mater. 24 210 doi: 10.1016/j.diamond.2012.01.026
[19]	Li X J et al 2011 Diam. Relat. Mater. 20 480 doi: 10.1016/j.diamond.2011.01.046
[20]	Su J J et al 2014 Vacuum 107 51 doi: 10.1016/j.vacuum.2014.04.002
[21]	Li X J et al 2011 Diam. Relat. Mater. 20 374 doi: 10.1016/j.diamond.2011.01.025
[22]	Su J J et al 2014 Diam. Relat. Mater. 42 28 doi: 10.1016/j.diamond.2013.12.001
[23]	Li Y F 2015 Design of high power MPCVD reactors and synthesis of high quality diamond films PhD Thesis University of Science and Technology Beijing, Beijing (in Chinese)
[24]	Li Y F et al 2015 Diam. Relat. Mater. 51 24 doi: 10.1016/j.diamond.2014.11.004
[25]	An K et al 2017 Plasma Sci. Technol. 19 095505 doi: 10.1088/2058-6272/aa7458
[26]	Pleuler E et al 2002 Diam. Relat. Mater. 11 467 doi: 10.1016/S0925-9635(01)00731-2
[27]	Weng J et al 2013 Appl. Surf. Sci. 276 529 doi: 10.1016/j.apsusc.2013.03.128
[28]	Popovich A F et al 2017 Plasma Sci. Technol. 19 035503 doi: 10.1088/2058-6272/19/3/035503
[29]	Weng J et al 2010 Plasma Sci. Technol. 12 761 doi: 10.1088/1009-0630/12/6/23

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Periodical cited type(11)

1.	Yang, Z., An, K., Liu, Y. et al. Edge effect during microwave plasma chemical vapor deposition diamond-film: Multiphysics simulation and experimental verification. International Journal of Minerals, Metallurgy and Materials, 2024, 31(10): 2287-2299. DOI:10.1007/s12613-024-2834-7
2.	Feng, X., Yuan, X., Chen, L. et al. Preparation of CNT/diamond composite via MPCVD: The interface behavior. Diamond and Related Materials, 2024. DOI:10.1016/j.diamond.2024.111432
3.	Yang, Z., Guo, Z., An, K. et al. Effect of argon addition on CH4-H2 microwave plasma: Self-consistent simulation and nanodiamond coating deposition. Surface and Coatings Technology, 2024. DOI:10.1016/j.surfcoat.2024.131165
4.	An, K., Liu, P., Zhang, Y. et al. Prestressing method to inhibit crack initiation and expansion in a large-sized diamond film during polishing. Diamond and Related Materials, 2024. DOI:10.1016/j.diamond.2024.111022
5.	Yang, Z., An, K., Feng, X. et al. Explore the growth mechanism of high-quality diamond under high average power density in the MPCVD reactor. Materials Science and Engineering: B, 2024. DOI:10.1016/j.mseb.2024.117248
6.	Yang, Z., Yang, A., Liu, P. et al. Preparation of 3-inch Diamond Film on Silicon Substrate for Thermal Management \| [热管理用 3 英寸硅衬底金刚石薄膜的制备]. Wuji Cailiao Xuebao/Journal of Inorganic Materials, 2024, 39(3): 283-290. DOI:10.15541/jim20230476
7.	Yang, Z., Liu, Y., Guo, Z. et al. Deposition of uniform diamond films on three dimensional Si spheres by using faraday cage in MPCVD reactor. Diamond and Related Materials, 2024. DOI:10.1016/j.diamond.2023.110767
8.	Gao, P., Wang, C., Peng, J. et al. Influence of temperature on the phase structure, surface morphology, mechanical and tribological properties of Ti–N coatings prepared by MPCVD. Ceramics International, 2024, 50(1): 474-483. DOI:10.1016/j.ceramint.2023.10.123
9.	Weng, J., Liu, F., Wang, Z.T. et al. Investigation on the preparation of large area diamond films with 150–200 mm in diameter using 915 MHz MPCVD system. Vacuum, 2023. DOI:10.1016/j.vacuum.2023.112543
10.	Zeng, Y., Sakamoto, Y. Effect of frequency on low temperature synthesis of diamond by pulsed discharge MPCVD. Results in Materials, 2023. DOI:10.1016/j.rinma.2023.100416
11.	Zhang, S., An, K., Shao, S. et al. Microwave Power and Deposition Pressure Matching of MPCVD Diamond Films \| [MPCVD金刚石薄膜微波功率和沉积压力匹配性研究]. Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2022, 51(5): 910-919.