Surface properties of Al-doped ZnO thin film before and after CF<sub>4</sub>/Ar plasma etching

Young-Hee JOO; Gwan-Ha KIM; Doo-Seung UM; Chang-Il KIM

doi:10.1088/2058-6272/ac5975

Plasma Science and Technology > 2022 > 24(7): 075504. > DOI: 10.1088/2058-6272/ac5975

Young-Hee JOO, Gwan-Ha KIM, Doo-Seung UM, Chang-Il KIM. Surface properties of Al-doped ZnO thin film before and after CF₄/Ar plasma etching[J]. Plasma Science and Technology, 2022, 24(7): 075504. DOI: 10.1088/2058-6272/ac5975

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Surface properties of Al-doped ZnO thin film before and after CF₄/Ar plasma etching

1.
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
2.
Department of Semiconductor Materials and Applications, Korea Polytechnic, Seongnam 13122, Republic of Korea
3.
Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea

More Information

Corresponding author:
Doo-Seung UM, E-mail: dsum@sejong.ac.kr

Chang-Il KIM, E-mail: cikim@cau.ac.kr
Received Date: December 07, 2021
Revised Date: February 27, 2022
Accepted Date: February 28, 2022
Available Online: December 13, 2023
Published Date: June 20, 2022

Graphical Abstract

Abstract

Abstract

Al-doped ZnO (AZO) is considered as an alternative to transparent conductive oxide materials. Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for the application of AZO in various devices. Therefore, in this study, the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated. The fastest etch rate was achieved with a CF₄/Ar ratio of 50:50 sccm. Regardless of the ratio of CF₄ to Ar, the transmittance of the film in the visible region exceeded 80%. X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching. It was also shown that F eliminates O vacancies. Consequently, the work function and bandgap energy increased as the ratio of CF₄ increased. This study not only provides information on the effect of plasma on AZO thin film, but identifies the cause of changes in the device characteristics during device fabrication.
- Al-doped ZnO,
- plasma etching,
- F-based plasma,
- surface characteristics,
- X-ray photoelectron spectroscopy,
- ultraviolet photoelectron spectroscopy

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Acknowledgment

This work was supported by the National Research Foundation (NRF) of Korea (Nos. 2018R1D1A1B07051429 and 2020R1G1A1102692).

References (38)

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Surface properties of Al-doped ZnO thin film before and after CF₄/Ar plasma etching

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