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Yan YANG, Tianyuan HUANG, Maoyang LI, Yaowei YU, Jianjun HUANG, Bin YU, Xuemei WU, Peiyu JI. The effect of nitrogen concentration on the properties of N-DLC prepared by helicon wave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2022, 24(10): 105502. DOI: 10.1088/2058-6272/ac6ec0
Citation: Yan YANG, Tianyuan HUANG, Maoyang LI, Yaowei YU, Jianjun HUANG, Bin YU, Xuemei WU, Peiyu JI. The effect of nitrogen concentration on the properties of N-DLC prepared by helicon wave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2022, 24(10): 105502. DOI: 10.1088/2058-6272/ac6ec0

The effect of nitrogen concentration on the properties of N-DLC prepared by helicon wave plasma chemical vapor deposition

  • Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by helicon wave plasma chemical vapor deposition (HWP-CVD). The mechanism of the plasma influence on the N-DLC structure and properties was revealed by the diagnosis of plasma. The effects of nitrogen doping on the mechanical and hydrophobicity properties of DLC films were studied. The change in the ratio of precursor gas flow reduces the concentration of film-forming groups, resulting in a decrease of growth rate with increasing nitrogen flow rate. The morphology and structure of N-DLC films were characterized by scanning probe microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy. The mechanical properties and wettability of N-DLC were analyzed by an ultra-micro hardness tester and JC2000DM system. The results show that the content ratio of N+ and N2+ is positively correlated with the mechanical properties and wettability of N-DLC films. The enhancement hardness and elastic modulus of N-DLC are attributed to the increase in sp3 carbon–nitrogen bond content in the film, reaching 26.5 GPa and 160 GPa respectively. Water contact measurement shows that the increase in the nitrogen-bond structure in N-DLC gives the film excellent hydrophobic properties, and the optimal water contact angle reaches 111.2°. It is shown that HWP technology has unique advantages in the modulation of functional nanomaterials.
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