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HUANG Hongwei (黄宏伟), YE Chao (叶超), XU Yijun (徐轶君), YUAN Yuan (袁圆), SHI Guofeng (施国峰), NING Zhaoyuan (宁兆元). Effect of Low-frequency Power on F, CF2 Relative Density and F/CF2 Ratio in Fluorocarbon Dual-Frequency Plasmas[J]. Plasma Science and Technology, 2010, 12(5): 566-570.
Citation: HUANG Hongwei (黄宏伟), YE Chao (叶超), XU Yijun (徐轶君), YUAN Yuan (袁圆), SHI Guofeng (施国峰), NING Zhaoyuan (宁兆元). Effect of Low-frequency Power on F, CF2 Relative Density and F/CF2 Ratio in Fluorocarbon Dual-Frequency Plasmas[J]. Plasma Science and Technology, 2010, 12(5): 566-570.
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Effect of Low-frequency Power on F, CF2 Relative Density and F/CF2 Ratio in Fluorocarbon Dual-Frequency Plasmas

  • School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China

Funds: National Natural Science Foundation of China ( Nos. 10975105, 10575074, 10635010)
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  • Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4F8 plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4F8 and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in EEDF.
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