Experimental Study of Reversely Switched Dynistor Discharge Based on Gap Breakdown Load

SHANG Chao; LIANG Lin; YU Yuehui; WU Yongjun; LI Hailiang

Plasma Science and Technology > 2011 > 13(1): 121-124.

SHANG Chao, LIANG Lin, YU Yuehui, WU Yongjun, LI Hailiang. Experimental Study of Reversely Switched Dynistor Discharge Based on Gap Breakdown Load[J]. Plasma Science and Technology, 2011, 13(1): 121-124.

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Experimental Study of Reversely Switched Dynistor Discharge Based on Gap Breakdown Load

1 Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China 2 Hubei TECH Semiconductors Co., Ltd., Xiangfan 441021, China 3 China Aero Shuangxing Technology Co., Ltd., Beijing 100142, China

Funds: supported by National Natural Science Foundation of China (Nos.50907025) and China Postdoctoral Science Foundation (Nos.20080440931)

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Abstract

Abstract

Breakdown characteristics of a gap breakdown load was investigated in this study, and a Reversely Switched Dynistor (RSD) discharge circuit was designed based on the load. Based on the characteristics of the load the RSD discharge circuit was improved and optimized. The volume of the magnetic switch was reduced. To protect the thyristor and RSD, a diode was anti-parallely connected with the thyristor, which reduced the time requirement when a power voltage was applied to RSD. Experimental results show the circuit designed in this study can switch a high voltage and high current smoothly, and allows the power voltage to change in a wider range.
- RSD,
- semiconductor switch,
- pulsed power,
- magnetic switch,
- gap breakdown.

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