Diagnostics of Parameters by Optical Emission Spectroscopy and Langmuir Probe in Mixtures (SiH4/C2H4/Ar) Ratio-Frequency Discharge

WU Jing (吴静); ZHANG Pengyun (张鹏云); SUN Jizhong (孙继忠); YAO Lieming (姚列明); DUAN Xuru(段旭如)

Plasma Science and Technology > 2011 > 13(5): 561-566.

WU Jing (吴静), ZHANG Pengyun (张鹏云), SUN Jizhong (孙继忠), YAO Lieming (姚列明), DUAN Xuru(段旭如). Diagnostics of Parameters by Optical Emission Spectroscopy and Langmuir Probe in Mixtures (SiH4/C2H4/Ar) Ratio-Frequency Discharge[J]. Plasma Science and Technology, 2011, 13(5): 561-566.

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Diagnostics of Parameters by Optical Emission Spectroscopy and Langmuir Probe in Mixtures (SiH4/C2H4/Ar) Ratio-Frequency Discharge

1.
School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
2.
Center for Fusion Science, Southwestern Institute of Physics, Chengdu 610054, China
3.
School of Physics and Optoelectronic Technology，Dalian University of Technology Dalian 116024, China

Funds: supported by the National Basic Research Program of China 973 Program (Grant No 2009GB107004)

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Received Date: October 28, 2010

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Abstract

Abstract

Optical emission spectroscopy and Langmuir Probe diagnostics were incorpoarted into the experiment, in which dust particles were formed in-situ by using reactive mixture gases (SiH4/C2H4/Ar) in a radio-frequency (RF) discharge plasma. The excitation temperature was first calculated by combining several optical emission spectra of argon lines and using a Boltzmann distribution to fit the experimental data, then the excitation temperature as functions of both gas pressure and RF power in SiH4/C2H4 /Ar discharges for different discharge conditions were obtained. Correspondingly, based on the measurement of the electron temperature by a Langmuir probe, the excitation temperature was compared with the electron temperature, and some discussions were presented. Finally the emission intensities of spectral lines of Si 390.6 nm, Si2+ 380.6 nm and C+ 426.7 nm were measured and presented as functions of pressure, RF power and flow rate of SiH4/C2H4.
- RF discharge,
- Optical Emission Spectroscopy,
- Langmuir Probe

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