Polysilicon Prepared from SiCl4 by Atmospheric-Pressure Non-Thermal Plasma

LI Xiaosong (李小松); WANG Nan (王楠); YANG Jinhua (杨晋华); WANG Younian (王友年); ZHU Aimin (朱爱民)

Plasma Science and Technology > 2011 > 13(5): 567-570.

LI Xiaosong (李小松), WANG Nan (王楠), YANG Jinhua (杨晋华), WANG Younian (王友年), ZHU Aimin (朱爱民). Polysilicon Prepared from SiCl4 by Atmospheric-Pressure Non-Thermal Plasma[J]. Plasma Science and Technology, 2011, 13(5): 567-570.

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Polysilicon Prepared from SiCl4 by Atmospheric-Pressure Non-Thermal Plasma

School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China

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Received Date: November 21, 2010

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Abstract

Abstract

Non-thermal plasma in atmospheric pressure was explored for the preparation of polysilicon from SiCl4. Two ac power supply sources of a positive pulse with frequencies of 8 and 100 kHz, respectively, were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition.
- non-thermal plasma,
- atmospheric pressure,
- polysilicon,
- optical emission spectrum

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