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Diagnostics of Parameters by Optical Emission Spectroscopy and Langmuir Probe in Mixtures (SiH4/C2H4/Ar) Ratio-Frequency Discharge

Diagnostics of Parameters by Optical Emission Spectroscopy and Langmuir Probe in Mixtures (SiH4/C2H4/Ar) Ratio-Frequency Discharge

  • 摘要: Optical emission spectroscopy and Langmuir Probe diagnostics were incorpoarted into the experiment, in which dust particles were formed in-situ by using reactive mixture gases (SiH4/C2H4/Ar) in a radio-frequency (RF) discharge plasma. The excitation temperature was first calculated by combining several optical emission spectra of argon lines and using a Boltzmann distribution to fit the experimental data, then the excitation temperature as functions of both gas pressure and RF power in SiH4/C2H4 /Ar discharges for different discharge conditions were obtained. Correspondingly, based on the measurement of the electron temperature by a Langmuir probe, the excitation temperature was compared with the electron temperature, and some discussions were presented. Finally the emission intensities of spectral lines of Si 390.6 nm, Si2+ 380.6 nm and C+ 426.7 nm were measured and presented as functions of pressure, RF power and flow rate of SiH4/C2H4.

     

    Abstract: Optical emission spectroscopy and Langmuir Probe diagnostics were incorpoarted into the experiment, in which dust particles were formed in-situ by using reactive mixture gases (SiH4/C2H4/Ar) in a radio-frequency (RF) discharge plasma. The excitation temperature was first calculated by combining several optical emission spectra of argon lines and using a Boltzmann distribution to fit the experimental data, then the excitation temperature as functions of both gas pressure and RF power in SiH4/C2H4 /Ar discharges for different discharge conditions were obtained. Correspondingly, based on the measurement of the electron temperature by a Langmuir probe, the excitation temperature was compared with the electron temperature, and some discussions were presented. Finally the emission intensities of spectral lines of Si 390.6 nm, Si2+ 380.6 nm and C+ 426.7 nm were measured and presented as functions of pressure, RF power and flow rate of SiH4/C2H4.

     

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