Deposition and Boron Doping of Nano-Crystalline Diamond Thin Films on Poly-crystalline Diamond Thick Films

XIONG Liwei (熊礼威); WANG Jianhua (汪建华); LIU Fan (刘繁); MAN Weidong (满卫东); et al

doi:10.1088/1009-0630/14/10/09

Plasma Science and Technology > 2012 > 14(10): 905-908. > DOI: 10.1088/1009-0630/14/10/09

XIONG Liwei (熊礼威), WANG Jianhua (汪建华), LIU Fan (刘繁), MAN Weidong (满卫东), et al. Deposition and Boron Doping of Nano-Crystalline Diamond Thin Films on Poly-crystalline Diamond Thick Films[J]. Plasma Science and Technology, 2012, 14(10): 905-908. DOI: 10.1088/1009-0630/14/10/09

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Deposition and Boron Doping of Nano-Crystalline Diamond Thin Films on Poly-crystalline Diamond Thick Films

1 Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430073, China 2 Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China

Funds: supported by the National Natural Science Foundation of China (No. 11175137), the Research Fund of Hubei Provincial Department of education (No. Q20081505) and the Research Fund of Wuhan Institute of Technology(No. 11111051)

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Received Date: August 28, 2011

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Abstract

Abstract

Boron-doped nano-crystalline diamond (NCD) thin films have been successfully deposited on well-polished poly-crystalline diamond (PCD) thick films in a microwave plasma enhanced chemical vapor deposition (MPCVD) reactor for the first time. Different surface pretreatment techniques are carried out under different gas conditions (CH₄, H₂, Ar, and CH₄/H₂) to eliminate the effect of grain boundaries on the growth of a smooth NCD intrinsic layer. Well doped NCD films have been fabricated in CH4/H₂/B₂H₆ plasma by varying the atomic ratio of B/C and the substrate temperature. Atomic force microscopy (AFM) results show that pretreatment in pure CH₄ plasma at 1000 °C is most effective for NCD growth, while hydrogen containing plasma is harmful to the surface smoothness of NCD thin films. Doping research indicates that the optimum parameters for the boron-doping of high-quality NCD thin films are B/C=300 ppm (10-6) and 800 °C.
- microwave plasma,
- chemical vapor deposition,
- diamond films,
- nanomaterials

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[1]	Jiali CHEN (陈佳丽), Peiyu JI (季佩宇), Chenggang JIN (金成刚), Lanjian ZHUGE (诸葛兰剑), Xuemei WU (吴雪梅). The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2019, 21(2): 25502-025502. DOI: 10.1088/2058-6272/aaee90
[2]	Peiyu JI (季佩宇), Jun YU (於俊), Tianyuan HUANG (黄天源), Chenggang JIN (金成刚), Yan YANG (杨燕), Lanjian ZHUGE (诸葛兰剑), Xuemei WU (吴雪梅). Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2018, 20(2): 25505-025505. DOI: 10.1088/2058-6272/aa94bd
[3]	Hongxiu ZHOU (周红秀), Boya YUAN (袁伯雅), Jilei LYU (吕继磊), Nan JIANG (江南). A novel approach of deposition for uniform diamond films on circular saw blades[J]. Plasma Science and Technology, 2017, 19(11): 115502. DOI: 10.1088/2058-6272/aa894a
[4]	Kang AN (安康), Liangxian CHEN (陈良贤), Jinlong LIU (刘金龙), Yun ZHAO (赵云), Xiongbo YAN (闫雄伯), Chenyi HUA (化称意), Jianchao GUO (郭建超), Junjun WEI (魏俊俊), Lifu HEI (黑立富), Chengming LI (李成明), Fanxiu LU (吕反修). The effect of substrate holder size on the electric field and discharge plasma on diamond-film formation at high deposition rates during MPCVD[J]. Plasma Science and Technology, 2017, 19(9): 95505-095505. DOI: 10.1088/2058-6272/aa7458
[5]	A F POPOVICH, V G RALCHENKO, V K BALLA, A K MALLIK, A A KHOMICH, A P BOLSHAKOV, D N SOVYK, E E ASHKINAZI, V Yu YUROV. Growth of 4″ diameter polycrystalline diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2017, 19(3): 35503-035503. DOI: 10.1088/2058-6272/19/3/035503
[6]	Djamel Eddine GOURARI, Manitra RAZAFINIMANANA, Marc MONTHIOUX, Raul ARENAL, Flavien VALENSI, S′ebastien JOULIE, Virginie SERIN. Synthesis of (B-C-N) Nanomaterials by Arc Discharge Using Heterogeneous Anodes[J]. Plasma Science and Technology, 2016, 18(5): 465-468. DOI: 10.1088/1009-0630/18/5/03
[7]	LIU Dan (刘丹), GOU Li (芶立), RAN Junguo (冉均国), ZHU Hong (朱虹), et al.. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition[J]. Plasma Science and Technology, 2015, 17(7): 574-578. DOI: 10.1088/1009-0630/17/7/08
[8]	Hadar MANIS-LEVY, Tsachi LIVNEH, Ido ZUKERMAN, Moshe H. MINTZ, Avi RAVEH. Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition[J]. Plasma Science and Technology, 2014, 16(10): 954-959. DOI: 10.1088/1009-0630/16/10/09
[9]	WANG Yongjie(王永杰), YIN Zengqian(尹增谦). Structural and Electrical Properties of Sulfur-Doped Diamond Thin Films[J]. Plasma Science and Technology, 2014, 16(3): 255-259. DOI: 10.1088/1009-0630/16/3/15
[10]	WENG Jun, XIONG Liwei, WANG Jianhua, MAN Weidong, CHEN Guanhu. Effect of Gas Sources on the Deposition of Nano-Crystalline Diamond Films Prepared by Microwave Plasma Enhanced Chemical Vapor Deposition[J]. Plasma Science and Technology, 2010, 12(6): 761-764.