Deposition and Boron Doping of Nano-Crystalline Diamond Thin Films on Poly-crystalline Diamond Thick Films

XIONG Liwei (熊礼威); WANG Jianhua (汪建华); LIU Fan (刘繁); MAN Weidong (满卫东); et al

doi:10.1088/1009-0630/14/10/09

Plasma Science and Technology > 2012 > 14(10): 905-908. > DOI: 10.1088/1009-0630/14/10/09

XIONG Liwei (熊礼威), WANG Jianhua (汪建华), LIU Fan (刘繁), MAN Weidong (满卫东), et al. Deposition and Boron Doping of Nano-Crystalline Diamond Thin Films on Poly-crystalline Diamond Thick Films[J]. Plasma Science and Technology, 2012, 14(10): 905-908. DOI: 10.1088/1009-0630/14/10/09

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Deposition and Boron Doping of Nano-Crystalline Diamond Thin Films on Poly-crystalline Diamond Thick Films

1 Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430073, China 2 Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China

Funds: supported by the National Natural Science Foundation of China (No. 11175137), the Research Fund of Hubei Provincial Department of education (No. Q20081505) and the Research Fund of Wuhan Institute of Technology(No. 11111051)

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Received Date: August 28, 2011

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Abstract

Abstract

Boron-doped nano-crystalline diamond (NCD) thin films have been successfully deposited on well-polished poly-crystalline diamond (PCD) thick films in a microwave plasma enhanced chemical vapor deposition (MPCVD) reactor for the first time. Different surface pretreatment techniques are carried out under different gas conditions (CH₄, H₂, Ar, and CH₄/H₂) to eliminate the effect of grain boundaries on the growth of a smooth NCD intrinsic layer. Well doped NCD films have been fabricated in CH4/H₂/B₂H₆ plasma by varying the atomic ratio of B/C and the substrate temperature. Atomic force microscopy (AFM) results show that pretreatment in pure CH₄ plasma at 1000 °C is most effective for NCD growth, while hydrogen containing plasma is harmful to the surface smoothness of NCD thin films. Doping research indicates that the optimum parameters for the boron-doping of high-quality NCD thin films are B/C=300 ppm (10-6) and 800 °C.
- microwave plasma,
- chemical vapor deposition,
- diamond films,
- nanomaterials

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