SUN Weizhong (孙伟中), ZHAO Chengli (赵成利), ZHANG Junyuan (张俊源), CHEN Feng (陈峰), GOU Fujun (苟富均). An MD Study of the Temperature E®ect on H Interacting with SiC (100)[J]. Plasma Science and Technology, 2012, 14(12): 1121-1124. DOI: 10.1088/1009-0630/14/12/16
Citation:
SUN Weizhong (孙伟中), ZHAO Chengli (赵成利), ZHANG Junyuan (张俊源), CHEN Feng (陈峰), GOU Fujun (苟富均). An MD Study of the Temperature E®ect on H Interacting with SiC (100)[J]. Plasma Science and Technology, 2012, 14(12): 1121-1124. DOI: 10.1088/1009-0630/14/12/16
SUN Weizhong (孙伟中), ZHAO Chengli (赵成利), ZHANG Junyuan (张俊源), CHEN Feng (陈峰), GOU Fujun (苟富均). An MD Study of the Temperature E®ect on H Interacting with SiC (100)[J]. Plasma Science and Technology, 2012, 14(12): 1121-1124. DOI: 10.1088/1009-0630/14/12/16
Citation:
SUN Weizhong (孙伟中), ZHAO Chengli (赵成利), ZHANG Junyuan (张俊源), CHEN Feng (陈峰), GOU Fujun (苟富均). An MD Study of the Temperature E®ect on H Interacting with SiC (100)[J]. Plasma Science and Technology, 2012, 14(12): 1121-1124. DOI: 10.1088/1009-0630/14/12/16
1 Key Laboratory of Radiation Physics and Technology, Ministry of Education; Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
2 Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China
3 FOM Institute for Plasma Physics, 3439 MN Nieuwegein, the Netherlands
Funds: supported by the Program for Outstanding Young Scientific and Technological Personnel Training of Guizhou Province of China (No. 700968101) and the International Thermonuclear Experimental Reactor (ITER) Special Program of China (No. 2009GB104006)
Molecular dynamics simulations were performed to study the interaction between atomic hydrogen and silicon carbide. In the present study, we focus on the effect of the surface temperature on H interacting with silicon carbide. The simulation results show that the retention of H atoms in the sample decreases linearly with increasing surface temperature. The depth profile analysis shows that the sample is modified by H bombardment, and the density of H atoms is greater than those of Si and C atoms near the interface region between the H-containing region and the bulk. However, near the surface region the densities of H, Si and C atoms are almost equivalent. In the modi¯ed layer, the bonds consist of Si-C and Si-H and C-H. The fraction of Si-C bonds is the greatest. Only a few C-H bonds are present.
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