Effect of Oxygen Plasma on Low Dielectric Constant HSQ (Hydrogensilsesquioxane) Films

YUAN Qianghua (袁强华); YIN Guiqin (殷桂琴); NING Zhaoyuan (宁兆元)

doi:10.1088/1009-0630/15/1/14

Plasma Science and Technology > 2013 > 15(1): 86-88. > DOI: 10.1088/1009-0630/15/1/14

YUAN Qianghua (袁强华), YIN Guiqin (殷桂琴), NING Zhaoyuan (宁兆元). Effect of Oxygen Plasma on Low Dielectric Constant HSQ (Hydrogensilsesquioxane) Films[J]. Plasma Science and Technology, 2013, 15(1): 86-88. DOI: 10.1088/1009-0630/15/1/14

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Effect of Oxygen Plasma on Low Dielectric Constant HSQ (Hydrogensilsesquioxane) Films

1 Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China 2 Department of Physics, Soochow University, Suzhou 215006, China.

Funds: supported by National Natural Science Foundation of China (No. 11165012), China Postdoctoral Science Foundation Funded Project (2011M501494, 2012T50831), Project of Graduate Supervisor of Gansu Province (No. 1001-01), Project of Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, Project of Northwest Normal University (NWNU-LKQN-11-9, NWNU-KJCXGC-03-62)

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Received Date: July 21, 2011

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Abstract

Abstract

The commercially available hydrogensilsesquioxane (HSQ) offers a low dielectric constant. In this paper, the impact of oxygen plasma treatment has been investigated on the low- k HSQ films. Fourier transform infrared (FTIR) spectroscopy was used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds after treatments. C-V and I-V measurements were used to determine the dielectric constant, the electronic resistivity and the breakdown electric field, respectively. The result indicates that oxygen plasma treatment will damage the HSQ films by removing the hydrogen content. Both dielectric constant and leakage current density increase significantly after oxygen plasma exposure. The dielectric constant and leakage current density can both be decreased by annealing at 350 ±C for 1.5 h in nitrogen ambient. The reason is that the open porous of the external films can be modified and density of thin film be increased. The rough surface can be smoothed.
- thin films,
- oxygen plasma exposure,
- annealing

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