Deposition of Ti-Al-N Films by Using a Cathodic Vacuum Arc with Pulsed Bias

ZHANG Guoping (张国平); WANG Xingquan (王兴权); LV Guohua (吕国华); et al

doi:10.1088/1009-0630/15/6/10

PDF
Cite
Share

facebook

twitter

google

linkedin

Plasma Science and Technology > 2013 > 15(6): 542-545. > DOI: 10.1088/1009-0630/15/6/10

ZHANG Guoping (张国平), WANG Xingquan (王兴权), LV Guohua (吕国华), et al. Deposition of Ti-Al-N Films by Using a Cathodic Vacuum Arc with Pulsed Bias[J]. Plasma Science and Technology, 2013, 15(6): 542-545. DOI: 10.1088/1009-0630/15/6/10

Citation:

PDF (10135 KB)

Deposition of Ti-Al-N Films by Using a Cathodic Vacuum Arc with Pulsed Bias

Institute of Physics, Chinese Academy of Science, Beijing 100080, China

Funds: supported financially by National Natural Science Foundation of China (No. 10735090), the National Magnetic Confinement Fusion Science Program (No. 2009GB106004) and Scientific and Technological Project of Beijing

More Information

Received Date: November 16, 2011

Graphical Abstract

Abstract

Abstract

Ti-Al-N hard films have been prepared by cathodic arc deposition by using an unipo- lar pulsed bias. In the present study, Ti-Al-N ¯lms were deposited on stainless steel and silicon wafers. The deposition rate, micrograph, preferred orientation and composition were systemati- cally investigated by usingx-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), and a scanning electron microscope (SEM). It is shown that substate bias duty cycle and frequency have a great effect on film structure. A simple explanation for the results is also presented.
- cathodic vacuum arc,
- Ti-Al-N film,
- pulsed bias