Structural and Electrical Properties of Sulfur-Doped Diamond Thin Films

WANG Yongjie(王永杰); YIN Zengqian(尹增谦)

doi:10.1088/1009-0630/16/3/15

Plasma Science and Technology > 2014 > 16(3): 255-259. > DOI: 10.1088/1009-0630/16/3/15

WANG Yongjie(王永杰), YIN Zengqian(尹增谦). Structural and Electrical Properties of Sulfur-Doped Diamond Thin Films[J]. Plasma Science and Technology, 2014, 16(3): 255-259. DOI: 10.1088/1009-0630/16/3/15

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Structural and Electrical Properties of Sulfur-Doped Diamond Thin Films

College of Mathematics and Physics, North China Electric Power University, Baoding 071003, China

Funds: supported by the Fundamental Research Funds for Central Universities of China (No.10ML40)

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Received Date: August 08, 2012

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Abstract

We report our observations on the higher carrier mobility and higher conductivity of sulfur-doped n-type diamond thin films synthesized by the hot filament chemical vapor deposi- tion (HFCVD). The structural and electrical characterizations of the films are measured by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscope (SEM), energy dispersion X-ray spectra (EDX), and Hall effect measurements. It is found that the sulfur atoms are in- corporated into the polycrystalline diamond films. The n-type conductivity of the films increases with the H 2 S concentration, and a conductivity of the films as high as 1.82 ? −1 ·cm −1 is achieved. The results show that the sulfur atom plays an important role in the structural and electrical properties of sulfur-doped diamond thin films.
- diamond film,
- hot filament CVD,
- n-type doping

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