Linear Plasma Sources for Large Area Film Deposition: A Brief Review

WEI Yu(魏钰); ZUO Xiao(左潇); CHEN Longwei(陈龙威); MENG Yuedong(孟月东); FANG Shidong(方世东); SHEN Jie(沈洁); SHU Xingsheng(舒兴胜)

doi:10.1088/1009-0630/16/4/10

Plasma Science and Technology > 2014 > 16(4): 356-362. > DOI: 10.1088/1009-0630/16/4/10

WEI Yu(魏钰), ZUO Xiao(左潇), CHEN Longwei(陈龙威), MENG Yuedong(孟月东), FANG Shidong(方世东), SHEN Jie(沈洁), SHU Xingsheng(舒兴胜). Linear Plasma Sources for Large Area Film Deposition: A Brief Review[J]. Plasma Science and Technology, 2014, 16(4): 356-362. DOI: 10.1088/1009-0630/16/4/10

Citation:

PDF (1104 KB)

Linear Plasma Sources for Large Area Film Deposition: A Brief Review

Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China

Funds: supported by National Natural Science Foundation of China (No. 11205201)

More Information

Received Date: July 17, 2012

Graphical Abstract

Abstract

Abstract

By utilization of different excitation power sources, linear plasma sources can be differentiated into DC, RF, VHF, microwave and dual frequency types. Through installing several linear plasma sources in parallel or adopting the so-called roll-to-roll (air-to-air) process, scale uniform linear plasma sources were realized and successfully applied to the deposition of large area uniform dielectric thin films. Furthermore, the magnetic field system can effectively reduce the recombination losses on the wall of the vacuum chamber and enhance the plasma density. Linear plasma sources with approximately one square meter deposition area with the plasma density of 10 ¹¹ cm⁻³ have been developed, some of which have been used for the deposition of dielectric layers and large area plasma etching.
- linear plasma sources,
- large area,
- uniform,
- high density

FullText(HTML)

References (72)

References

1 Holland J, Barnes M, Demos A, et al. 1996, SID Sym.Digest., 27: 526;

2 Heinrich F, Banzlger U, Jentzsch A, et al. 2000, J. Vac.Sci. Technol. B, 14: 2000;

3 Takei H, Kawamura H, Ohta Y, et al. 1998, SID Sym Digest., 98: 1102;

4 Schmitt J, Elyaakoubi M, Sansonnens L. 2002, Plasma Sources Sci. Technol., 11: 206;

5 Chen L W, Meng Y D, Shen J, et al. 2009, J. Phys. D:Appl. Phys., 42: 55505;

6 Schoenbach K H, Tessnow T, Peterkin F E, et al. 1996,Appl. Phys. Lett., 68: 3;

7 Xu S, Ostrikov K N, Li Y, et al. 2001, Phys. Plasmas,8: 2549;

8 Fang S D, Meng Y D, Shen J, et al. 2011, Plasma Sci.Technol., 13: 217;

9 Flikweert A J, Zimmermann T, Merdzhanova T, et al.2012, J. Phys. D: Appl. Phys., 45: 015101;

10 Tanjyo M, Sakai S, Takahashi M. 2001, Surf. Coat.Technol., 136: 281;

11 águas H, Silva V, Fortunato E, et al. 2003, Jpn. J.Appl. Phys., 42: 4935;

12 Taylor A, Fendrych F, Fekete L, et al. 2011, Diamond Relat. Mater., 20: 613;

13 Stephan U, Kuske J, Kottwitz A, et al. 1999, Mat. Res.Soc. Symp., 557: 157;

14 Niu J H, Liu D P, Wu Y F. 2011, Surf. Coat. Technol.,205: 3434;

15 Rank R, W?unsche T, Günther S. 2003, Surf. Coat.Technol., 174: 218;

16 Gweon G H, Lim J H, Kim K N, et al. 2010, Vacuum,84: 823;

17 Mao M, Bogaerts A. 2010, J. Phys. D: Appl. Phys.,43: 205201;

18 Shinohara S, Motomura1 T, Tanaka1 K, et al. 2010,Plasma Sources Sci. Technol., 19: 034018;

19 Fukasawa T, Fujii S, Shindo H. 2005, Jpn. J. Appl.Phys., 44: 1945;

20 Hubner S, Wolthuis J, Palomares J M, et al. 2011, J.Phys. D: Appl. Phys., 44: 385202;

21 Kim K N, Lim J H, Jeong H B, et al. 2012, Microelec-tron. Eng., 89: 133;

22 Aken B B V, Devilee C, D?orenk?amper M, et al. 2007,J. Non-Cryst. Solids, 354: 2392;

23 Zimmermann T, Strobel C, Albert M, et al. 2010,Phys. Status Solidi A, 7: 1097;

24 Schlemm H, Fritzsche M, Roth D. 2005, Surf. Coat.Technol., 200: 958;

25 Strobel C, Zimmermanna T, Albert M, et al. 2009, Sol.Energy Mater. Sol. Cells, 93: 1598;

26 Rudiger J, Brechtela H, Kottwitz A, et al. 2003, Thin Solid Films, 427: 16;

27 Kaiser M, Baumg?artner K M, Schulz A, et al. 1999,Surf. Coat. Technol., 119: 552;

28 Nagatsu M, Ito A, Toyodaet N, et al. 1999, Jpn. J.Appl. Phys., 38: 679;

29 Takagia T, Takechib K, Nakagawaa Y, et al. 1998, Vac-uum, 51: 751;

30 Murata1 M, Takeuchi1 Y, Sasagawa E, et al. 1996,Rev. Sci. Instrum., 67: 1542;

31 Takeuchiet Y, Nawata Y, Ogawa K, et al. 2001, Thin Solid Films, 386: 133;

32 Krzec D, Mildner M, Hillemannet F, et al. 1997, Surf.Coat. Technol., 97: 759;

33 Bluem E, Bechu S, Leprince P, et al. 1995, J. Phys. D:Appl. Phys., 28: 1529;

34 Setsuharaet Y. 2005, J. Plasma Fusion Res., 81: 85;

35 Setsuharaet Y, Shoji T, Ebe A, et al. 2003, Surf. Coat.Technol., 33: 174;

36 Wu Y, Lieberman M A. 1998, Appl. Phys. Lett., 72:777;

37 Lieberman M A, Booth J P, Chabert P, et al. 2002,Plasma Sources Sci. Technol., 11: 283;

38 Nagatsu M, Morita S, Ghanashevet I, et al. 2000, J.Phys. D: Appl. Phys., 33: 1143;

39 Zakrzewski Z, Moisan M. 1995, Plasma Sources Sci.Technol., 4: 379;

40 Pollak J, Moisan M, Zakrzewski Z, et al. 2007, Plasma Sources Sci. Technol., 16: 310;

41 Ono K. 2004, J. Plasma Fusion Res., 80: 909;

42 Tobari H. 2008, Rev. Sci. Instrum., 79: 111;

43 Hopfe B V, Rogler D, Maeder G, et al. 2005, Chem.Vap. Deposition, 11: 510;

44 Linaschke D, Leistner M, Grabau P, et al. 2009, IEEETrans. Plasma Sci., 37: 6;

45 Bárdo? L, Baránková H, Berg S. 1997, Appl. Phys.Lett., 70: 577;

46 Lan Y, You Q L, Cheng C, et al. 2011, Plasma Sci.Technol. 13: 88;

47 Yu Z, Shaw D, Gonzales P, et al. 1995, J. Vac. Sci.Technol. A, 13: 503;

48 Kim J H, Lee H J, Kim Y T, et al. 1997, J. Vac. Sci.Technol. A, 15: 564;

49 Meziani T, Colpo P, Rossi F. 2001, Plasma Sources Sci. Technol., 10: 276;

50 Suzuki K, Nakamura K, Ohkubo H, et al. 1998, Plasma Sources Sci. Technol., 7: 13;

51 Kanoh M, Suzuki K, Tonotani J, et al. 2001, Jpn. J.Appl. Phys., 40: 5419;

52 Kim K N, Jung S J, Lee Y J, et al. 2005, J. Appl.Phys., 97: 063302;

53 Lim J H, Kim K N, Park J K, et al. 2008, Appl. Phys.Lett., 92: 051504;

54 Kim K N, Lim J H, Park J K, et al. 2008, Surf. Coat.Technol., 202: 5242;

55 Kim K N, Jung S J, Yeom G Y. 2005, Thin Solid Films,491: 82;

56 Kim K N, Jung S J, Yeom G Y. 2005, Jpn. J. Appl.Phys., 44: 8133;

57 Lim J H, Kim K N, Yeom G Y. 2007, Plasma Process.Polym., 4: 999;

58 Jung S J, Kim K N, Yeom G Y. 2005, Surf. Coat.Technol., 200: 780;

59 Kim K N, Min K S, Yeom G Y. 2006, Jpn. J. Appl.Phys., 45: 8869;

60 Kim K N, Jung S J, Yeom G Y. 2005, Surf. Coat.Technol., 200: 784;

61 Kim K N, Yeom G Y. 2006, J. Korean Phys. Soc., 48:256;

62 Kim K N, Lim J H, Park J K, et al. 2008, Plasma Chem. Plasma Process., 28: 147;

63 Liehr M, Dieguez-Campo M. 2005, Surf. Coat. Tech-nol., 200: 21;

64 Neykova N, Kozaka H, Ledinsky M, et al. 2012, Vac-uum, 86: 603;

65 Liehr M, Wieder S, Dieguez-Campo M. 2006, Thin Solid Films, 502: 9;

66 R?auchle E. 1998, J. Phys. IV France, 8: 7;

67 Fendrych F, Taylor A, Peksa L, et al. 2010, J. Phys.D: Appl. Phys., 43: 374018;

68 Schlemm H, Mai A, Roth S, et al. 2003, Surf. Coat.Technol., 174: 208;

69 Madocks J, Rewhinkle J, Barton L. 2005, Mater. Sci.Eng. B, 119: 268;

70 Hong G D. 2004, J. Korean Phys. Soc., 44: 1000;

71 Intrator T, Menard J. 1996, Plasma Sources Sci. Tech-nol., 5: 371;

72 Kim K N, Lim J H, Yeom G Y, et al. 2006, Appl. Phys.Lett., 89: 251501

Cited By

Get Citation

PDF

XML

Article views (206) PDF downloads (2338)

Turn off MathJax

Article Contents

Abstract

References

Linear Plasma Sources for Large Area Film Deposition: A Brief Review

Abstract

References

Catalog

Export File

Citation

Format

Content