Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Films by Dielectric Barrier Discharge in TiCl 4 /O 2 /N 2 Gas Mixtures

NIU Jinhai(牛金海); ZHANG Zhihui(张志慧); FAN Hongyu(范红玉); YANG Qi(杨杞); LIU Dongping(刘东平); QIU Jieshan(邱介山)

doi:10.1088/1009-0630/16/7/11

Plasma Science and Technology > 2014 > 16(7): 695-700. > DOI: 10.1088/1009-0630/16/7/11

NIU Jinhai(牛金海), ZHANG Zhihui(张志慧), FAN Hongyu(范红玉), YANG Qi(杨杞), LIU Dongping(刘东平), QIU Jieshan(邱介山). Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Films by Dielectric Barrier Discharge in TiCl₄ /O₂ /N ₂Gas Mixtures[J]. Plasma Science and Technology, 2014, 16(7): 695-700. DOI: 10.1088/1009-0630/16/7/11

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Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Films by Dielectric Barrier Discharge in TiCl₄ /O₂ /N ₂Gas Mixtures

1 Research Center for Optoelectronics, Dalian Nationalities University, Dalian 116600, China 2 Vocational and Technical College of Dalian University, Dalian 116001, China 3 Fujian Key Lab of Plasma and Magnetic Resonance, School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005, China 4 Carbon Research Laboratory, Center for Nano Materials and Science, School of Chemical Engineering, State Key Lab of Fine Chemicals, Dalian University of Technology, Dalian 116012, China

Funds: supported by National Natural Science Foundation of China (Nos. 10875025 and 20803007) and Fundamental Research Funds for Central Universities of China (Nos. DC12010116 and DC13010106), Program for Liaoning Excellent Talents in University (LJQ20l3128)

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Received Date: March 28, 2013

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Abstract

Low-pressure dielectric barrier discharge (DBD) TiCl₄ /O ₂ and N₂ plasmas have been used to deposit titanium oxide films at different power supply driving frequencies. A home- made large area low pressure DBD reactor was applied, characterized by the simplicity of the experimental set-up and a low consumption of feed gas and electric power, as well as being easy to operate. Atomic force microscopy, scanning electron microscopy, energy dispersive spectroscopy, and contact angle measurements have been used to characterize the deposited films. Experimental results show all deposited films are uniform and hydrophilic with a contact angle of about 15 ^o . Compared to titanium oxide films deposited in TiCl ₄ /O ₂ gas mixtures, those in TiCl ₄/O ₂ /N₂ gas mixtures are much more stable. The contact angle of titanium oxide films in TiCl ₄ /O₂ /N₂ gas mixtures with the addition of 50% N 2 and 20% TiCl 4 is still smaller than 20^o, while that of undoped titanium oxide films is larger than 64 o when they are measured after one week. The low-pressure TiCl 4 /O 2 plasmas consist of pulsed glow-like discharges with peak widths of several microseconds, which leads to the uniform deposition of titanium oxide films. Increasing a film thickness over several hundreds of nm leads to the film’s fragmentation due to the over-high film stress. Optical emission spectra (OES) of TiCl ₄ /O ₂ DBD plasmas at various power supply driving frequencies are presented.
- dielectric barrier discharge,
- titanium oxide film,
- hydrophilic

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References

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Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Films by Dielectric Barrier Discharge in TiCl 4 /O 2 /N 2 Gas Mixtures

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Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Films by Dielectric Barrier Discharge in TiCl₄ /O₂ /N ₂Gas Mixtures