Advanced Search+
Seon-Geun OH, Young-Jun LEE, Jae-Hong JEON, Jong-Hyeon SEO, Hee-Hwan CHOE. The Spatial Effects of Antenna Configuration in a Large Area Inductively Coupled Plasma System for Flat Panel Displays[J]. Plasma Science and Technology, 2014, 16(8): 758-766. DOI: 10.1088/1009-0630/16/8/06
Citation: Seon-Geun OH, Young-Jun LEE, Jae-Hong JEON, Jong-Hyeon SEO, Hee-Hwan CHOE. The Spatial Effects of Antenna Configuration in a Large Area Inductively Coupled Plasma System for Flat Panel Displays[J]. Plasma Science and Technology, 2014, 16(8): 758-766. DOI: 10.1088/1009-0630/16/8/06

The Spatial Effects of Antenna Configuration in a Large Area Inductively Coupled Plasma System for Flat Panel Displays

More Information
  • Received Date: September 02, 2013
  • Spatial distributions of plasma parameters such as electron density, electron temperature and electric potential were investigated using a commercial simulation software (COMSOL TM ) to predict the effects of antenna configuration in a large area inductively cou- pled plasma (ICP) system for flat panel displays. Nine planar antenna sets were evenly placed above a ceramic window. While the electron density was influenced by both the input current and gas pressure, the electron temperature and electric potential were dominantly affected by the gas pressure.
  • 1.Donnelly V M, Kornblit A. 2013, J. Vac. Sci. Technol.,31: 050825.
    2.Kim S S, Chang H Y, Chang C S, et al. Appl. Phys.Lett., 77: 492.
    3.Wu Y, Lieberman M A. 2000, Plasma Source Sci. Technol., 9: 210.
    4.Cheng J, Zhu Y, Ji L. 2012, Plasma Sci. Technol., 14:12.
    5.Lymberopoulos D P, Economou D J. 1995,.J. Res.Natl. Inst. Stand. Technol., 100: 473.
    6.Bi Z, Xu X, Liu Y, et al. 2011, Plasma Sci. Technol.,12: 2.
    7.Chen G, Raja L L. 2004, J. Appl. Phys., 96: 6073.
    8.Xu X, Ge H, Wang S, et al. 2009, Prog. Nat. Sci., 19:677.
    9.Passchier J D P, Goedheer W J. 1993, J. Appl. Phys.,74: 3744.
    10.Lymberopoulos D P, Economou D J. 1993, J. Appl.Phys., 73: 3668.
    11.Novikova T, Kalache B, Bulkin P. 2003, J. Appl. Phys., 93: 3198
    12 Bukowski J D, Graves D B, Vitello P. 1996, J. Appl. Phys., 80: 2614
    13 Brcka J. 2006, Modelling Remote H2 Plasma in Semi-conductor Processing tool. Proceeding of the COM-SOL Users Conference, Boston
    14 Kawamura E, Graves D B, Lieberman M A. 2011, Plasma Source Sci. Technol., 20: 035009
    15 Chen J, Ji L, Zhu Y, et al. 2010, J. Semicond., 31: 032004
    16.Chen J, Ji L, Wang K, et al. 2013, J. Semicond., 34: 066004
    17 Lee I, Graves D B, Lieberman M A. 2008, Plasma Sources Sci. Technol., 17: 015018
    18 Hsu C, Nierode M A, Coburn J W, et al. 2006, J. Phys. D: Appl. Phys., 39: 3272
    19 COMSOL 4.3b, www.comsol.com
    20.Lieberman M A, Lichtenberg A J. 2005, Principle of Plasma Discharge and Materials Processing. John Wi-ley & Sons

Catalog

    Article views (167) PDF downloads (1029) Cited by()

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return