Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas

MA Zhibin (马志斌); WU Jun (吴俊); TAN Bisong (谭必松); SHEN Wulin (沈武林); PAN Xin (潘鑫); WANG Jianhua (汪建华)

doi:10.1088/1009-0630/17/4/06

Plasma Science and Technology > 2015 > 17(4): 294-297. > DOI: 10.1088/1009-0630/17/4/06

MA Zhibin (马志斌), WU Jun (吴俊), TAN Bisong (谭必松), SHEN Wulin (沈武林), PAN Xin (潘鑫), WANG Jianhua (汪建华). Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas[J]. Plasma Science and Technology, 2015, 17(4): 294-297. DOI: 10.1088/1009-0630/17/4/06

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Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas

Province Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China

Funds: supported by National Natural Science Foundation of China (No. 10875093)

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Received Date: June 13, 2014

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Abstract

Abstract

In order to precisely measure the ion parameters in a microwave electron cyclotron resonance plasma using an ion sensitive probe, the dependences of the current-voltage (I-V ) characteristics on the shielding height (h) and the potential difference between inner and outer electrodes (V _B ) have been investigated at different working pressures of 0.03 Pa and 0.8 Pa. Results show that the I-V curves at higher pressure are more sensitive to the variation of h than those at lower pressure. The influence of V _B on ion temperature (T_i ) measurement becomes more prominent when the pressure is increased from 0.03 Pa to 0.8 Pa. Under both pressures, the optimized h is obtained at the condition where the current reaches zero in the positive voltage region with a suitable V_B of −1.5 V because of effective shielding of the electron E×B drift.
- working pressure,
- ion sensitive probe,
- ion temperature,
- plasma

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