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WANG Hongyu (王虹宇), JIANG Wei (姜巍), SUN Peng (孙鹏), ZHAO Shuangyun (赵双云), LI Yang (李阳). Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma[J]. Plasma Science and Technology, 2016, 18(2): 143-146. DOI: 10.1088/1009-0630/18/2/08
Citation: WANG Hongyu (王虹宇), JIANG Wei (姜巍), SUN Peng (孙鹏), ZHAO Shuangyun (赵双云), LI Yang (李阳). Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma[J]. Plasma Science and Technology, 2016, 18(2): 143-146. DOI: 10.1088/1009-0630/18/2/08

Modeling of Perpendicularly Driven Dual-Frequency Capacitively Coupled Plasma

Funds: supported by National Natural Science Foundation of China (Nos. 11275007 and 11275039), partly supported by Program for Liaoning Excellent Talents in University of China (LJQ2012098)
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  • Received Date: April 17, 2015
  • We analyzed perpendicularly configured dual-frequency (DF) capacitively coupled plasmas (CCP). In this configuration, two pairs of electrodes are arranged oppositely, and the discharging is perpendicularly driven by two radio frequency (RF) sources. Particle-in-cell/Monte Carlo (PIC/MC) simulation showed that the con?guration had some advantages as this configu?ration eliminated some dual frequency coupling effects. Some variation and potential application of the discharging con?guration is discussed briefly.
  • 1 Lieberman M A and Lichtenberg A J. 2005, Principles of Plasma Discharges and Materials Processing. 2nd ed., Wiley, New York 2 Makabe T and Petrovic Z L. 2006, Plasma Electronics: Applications in Microelectronic Device Fabrication. Taylor and Francis Group, New York 3 Wakayama G and Nanbu K. 2003, IEEE Trans. Plasma Sci., 31: 638 4 Boyle P C, Ellingboe A R, and Turner M M. 2004,Plasma Sources Sci. Technol., 13: 493 5 Rauf S, Kenney J and Collins K. 2009, J. Appl. Phys.,105: 103301 6 Kawamura E, Lieberman M A, and Lichtenberg A J.2008, Plasma Sources Sci. Technol., 17: 045002 7 Mussenbrock T, Brinkmann R P, Lieberman M A,et al. 2008, Phys. Rev. Lett., 101: 085004 8 Abdel-Fattah E and Sugai H. 2003, Appl. Phys. Lett.,83: 1533 9 Perret A, Chabert P, Booth J P, et al. 2003, Appl.Phys. Lett., 83: 243 10 Chabert P, Raimbault J L, Rax J M, et al. 2004, Phys.Plasmas, 11: 1775 11 Lieberman M A, Booth J P, Chabert P, et al. 2002,Plasma Sources Sci. Technol., 11: 283 12 Chabert P, Raimbault J L, Levif P, et al. 2005, Phys.Rev. Lett., 95: 205001 13 Ahn S K and Chang H Y. 2008, Appl. Phys. Lett., 93:031506 14 Gans T, Schulze J, O’Connell D, et al. 2006, Appl.Phys. Lett., 89: 261502 15 Lee J K, Manuilenko O V, Babaeva N Y, et al. 2005,Plasma Sources Sci. Technol., 14: 89 16 Schulze J, Donk′ o Z, Schüngel E, et al. 2011, Plasma Sources Sci. Technol., 20: 045007 17 Sansonnens L and Schmitt J P M. 2003, Appl. Phys.Lett., 82: 182 18 OhtsuY and Urasaki H. 2010, Plasma Sources Sci.Technol., 19: 045012 19 Schmidt N, Schulze J, Schüngel E, et al. 2013, J. Phys.D: Appl. Phys., 46: 505202 20 Derzsi A, Korolov I, Schüngel E, et al. 2013, Plasma Sources Sci. Technol., 22: 065009 21 Czarnetzki U, Heil B G, Schulze J, et al. 2009, J. Phys.Conf. Ser., 162: 12010 22 Delattre P A, Lafleur T, Johnson E, et al. 2013, J.Phys. D: Appl. Phys., 46: 235201 23 Donk′ o Z, Schulze J, Heil B G, et al. 2009, J. Phys. D:Appl. Phys., 42: 025205 24 Vizmuller P. 1996, RF Design Guide - System, Circuits and Equations. Artech House, Norwood 25 Wang H Y, Jiang W and Wang Y N. 2010, Plasma Sources Sci. Technol., 19: 045023 26 Wang H Y, Jiang W, Sun P, et al. 2014, Chin. Phys.B, 23: 035204 27 Kim G J, Iza F and Lee J K. 2006, J. Phys. D: Appl.Phys., 39: 4386 28 Veitzer S A and Stoltz P H. 2007, Nucl. Instr. Method.Phys. Res. B, 261: 204 29 Lafleur T and Boswell R W. 2012, Phys. Plasmas, 19:023508

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