Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50kHz/ 33MHz dual-frequency atmospheric-pressure plasma jet

Jiaojiao LI (李娇娇); Qianghua YUAN (袁强华); Xiaowei CHANG (常小伟); Yong WANG (王勇); Guiqin YIN (殷桂琴); Chenzhong DONG (董晨钟)

doi:10.1088/2058-6272/aa57e4

Plasma Science and Technology > 2017 > 19(4): 45505-045505. > DOI: 10.1088/2058-6272/aa57e4

Jiaojiao LI (李娇娇), Qianghua YUAN (袁强华), Xiaowei CHANG (常小伟), Yong WANG (王勇), Guiqin YIN (殷桂琴), Chenzhong DONG (董晨钟). Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50kHz/ 33MHz dual-frequency atmospheric-pressure plasma jet[J]. Plasma Science and Technology, 2017, 19(4): 45505-045505. DOI: 10.1088/2058-6272/aa57e4

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Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50kHz/ 33MHz dual-frequency atmospheric-pressure plasma jet

Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, People’s Republic of China

Funds: This work was supported by National Natural Science Foundation of China (Grant No. 11165012, 11665012), the Project of the Natural Science Foundation of GanSu (145RJZA159).

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Received Date: October 13, 2016

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Abstract

Abstract

The deposition of organosilicone thin films from hexamethyldisiloxane ( HMDSO) by using a dual-frequency ( 50 kHz/33 MHz) atmospheric-pressure micro-plasma jet with an admixture of a small volume of HMDSO and Ar was investigated. The topography was measured by using scanning electron microscopy. The chemical bond and composition of these films were analyzed by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy. The results indicated that the as-deposited film was constituted by silicon, carbon, and oxygen elements, and FTIR suggested the films are organosilicon with the organic component (–CH_x) and hydroxyl functional group(–OH) connected to the Si–O–Si backbone. Thin-film hardness was recorded by an MH–5–VM Digital Micro-Hardness Tester. Radio frequency power had a strong impact on film hardness and the hardness increased with increasing power.
- organosilicone thin film,
- hexamethyldisiloxane,
- dual-frequency atmospheric-pressure plasma jet

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References (39)

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