The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition

Jiali CHEN (陈佳丽); Peiyu JI (季佩宇); Chenggang JIN (金成刚); Lanjian ZHUGE (诸葛兰剑); Xuemei WU (吴雪梅)

doi:10.1088/2058-6272/aaee90

Plasma Science and Technology > 2019 > 21(2): 25502-025502. > DOI: 10.1088/2058-6272/aaee90

Jiali CHEN (陈佳丽), Peiyu JI (季佩宇), Chenggang JIN (金成刚), Lanjian ZHUGE (诸葛兰剑), Xuemei WU (吴雪梅). The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition[J]. Plasma Science and Technology, 2019, 21(2): 25502-025502. DOI: 10.1088/2058-6272/aaee90

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The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition

¹ School of Physical Science and Technology, Soochow University, Suzhou 215006, People’s Republic of China
² School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, People’s Republic of China
³ State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China
⁴ Analysis and Testing Center, Soochow University, Suzhou 215123, People’s Republic of China

Funds: This work was supported by the National Magnetic Confinement Fusion Science Program of China (Grant Nos. 2014GB106005 and 2014GB106000), National Natural Science Foundation of China (Nos. 11505123, 11435009, 11375126), and a Project funded by China Postdoctoral Science Foundation (No. 156455).

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Received Date: September 09, 2018

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Abstract

Abstract

In this paper, N-doped diamond-like carbon (DLC) films were deposited on silicon substrates by using helicon wave plasma chemical vapor deposition (HWP-CVD) with the Ar/CH₄/N₂ mixed gas. The surface morphology, structural and mechanical properties of the N-doped DLC films were investigated in detail by scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), Raman spectra, and atomic force microscopy (AFM). It can be observed from SEM images that surface morphology of the films become compact and uniform due to the incorporation of N. The maximum of the deposition rate of the films is 143 nmmin^-1, which is related to the high plasma density. The results of XPS show that the N incorporates in the films and the C-C sp³ bond content increases firstly up to the maximum (20%) at 10 sccm of N₂ flow rate, and then decreases with further increase in the N₂ flow rate. The maximum Young’s modulus of the films is obtained by the doping of N and reaches 80 GPa at 10 sccm of N₂ flow rate, which is measured by AFM in the scanning probe microscope mode. Meanwhile, friction characteristic of the N-doped DLC films reaches a minimum value of 0.010.
- N-doped DLC,
- helicon wave plasma,
- Young’s modulus,
- friction coefficient

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References (31)

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The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition