Effects of 50 keV and 100 keV Proton Irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells

GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5?1010 cm-2, 1?1011 cm-2, 1?1012 cm-2, and 1?1013 cm-2. Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements, and then the changes in Isc, Voc, Pmax and the spectral response of the cells are observed as functions of proton irradiation fluence and energy. The results show that the spectral response of the top cell degrades more significantly than that of the middle cell, and 100 keV proton-induced degradation rates of Isc, Voc and Pmax are larger compared with 50 keV proton irradiation.