Two-dimensional analysis of a negative differential conductance gate transistor as a THz emitter

We investigate plasma modes in a transistor including a negative differential conductance in the gate. The analytical results show that the plasma wave generation is substantially influenced by the lateral direction (width of the transistor), gate leakage current and viscosity. The injection from the gate (opposed to the gate leakage current) can improve the plasma oscillations and their amplitude with respect to ordinary transistors. We also estimate, which to our best knowledge has been derived for the first time, the total power emitted by the transistor and the emitted pattern which qualitatively gives reasonable agreement with the experimental data. The results show that the radiated power depends on various parameters such as drift velocity, momentum relaxation time, gate leakage current and especially the lateral direction. A negative gate current enhances the power while the gate leakage current decreases the power.