Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation

Quan SHI (石权); Shin KAJITA; Shuyu DAI (戴舒宇); Shuangyuan FENG (冯双园); Noriyasu OHNO

doi:10.1088/2058-6272/abea71

Plasma Science and Technology > 2021 > 23(4): 45503-045503. > DOI: 10.1088/2058-6272/abea71

Quan SHI (石权), Shin KAJITA, Shuyu DAI (戴舒宇), Shuangyuan FENG (冯双园), Noriyasu OHNO. Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation[J]. Plasma Science and Technology, 2021, 23(4): 45503-045503. DOI: 10.1088/2058-6272/abea71

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Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation

¹ Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
² Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan
³ Key Laboratory of Materials Modification by Laser, Ion and Electron Beams Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, People's Republic of China

Funds: This work was supported in part by a Grant-in Aid for Scientific Research (Nos. 17KK0132, 19H01874) from the Japan
Society for the Promotion of Science (JSPS). The contribution by Dr Shuyu Dai was also supported by National MCF
Energy R&D Program of China (Nos. 2018YFE0311100 and 2018YFE0303105) and National Natural Science Foundation of China (No. 12075047).

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Received Date: November 04, 2020
Revised Date: February 24, 2021
Accepted Date: February 25, 2021

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Abstract

Abstract

The formation mechanism of nanocone structure on silicon (Si) surface irradiated by helium plasma has been investigated by experiments and simulations. Impurity (molybdenum) aggregated as shields on Si was found to be a key factor to form a high density of nanocone in our previous study. Here to concrete this theory, a simulation work has been developed with SURO code based on the impurity concentration measurement of the nanocones by using electron dispersive x-ray spectroscopy. The formation process of the nanocone from a flat surface was presented. The modeling structure under an inclining ion incident direction was in good agreement with the experimental result. Moreover, the redeposition effect was proposed as another important process of nanocone formation based on results from the comparison of the cone diameter and sputtering yield between cases with and without the redeposition effect.
- black silicon,
- helium plasma,
- nanocone,
- simulation

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Modeling of the impurity-induced silicon nanocone growth by low energy helium plasma irradiation