Improving the surface flashover performance of epoxy resin by plasma treatment: a comparison of fluorination and silicon deposition under different modes

Jiyuan YAN (闫纪源); Guishu LIANG (梁贵书); Hongliang LIAN (廉洪亮); Yanze SONG (宋岩泽); Haoou RUAN (阮浩鸥); Qijun DUAN (段祺君); Qing XIE (谢庆)

doi:10.1088/2058-6272/ac15ee

Plasma Science and Technology > 2021 > 23(11): 115501. > DOI: 10.1088/2058-6272/ac15ee

Jiyuan YAN (闫纪源), Guishu LIANG (梁贵书), Hongliang LIAN (廉洪亮), Yanze SONG (宋岩泽), Haoou RUAN (阮浩鸥), Qijun DUAN (段祺君), Qing XIE (谢庆). Improving the surface flashover performance of epoxy resin by plasma treatment: a comparison of fluorination and silicon deposition under different modes[J]. Plasma Science and Technology, 2021, 23(11): 115501. DOI: 10.1088/2058-6272/ac15ee

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Improving the surface flashover performance of epoxy resin by plasma treatment: a comparison of fluorination and silicon deposition under different modes

¹ State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, People's Republic of China
² Electrical and Electronic Engineering of North China Electric Power University, Baoding 071003, People's Republic of China

Funds: This work was supported by National Natural Science Foundation of China (No. 51777076) and the Self-topic Fund of the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (No. LAPS2019-21).

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Received Date: March 21, 2021
Revised Date: July 14, 2021
Accepted Date: July 18, 2021

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Abstract

Abstract

This work treats the Al2O3-ER sample surface using dielectric barrier discharge fluorination (DBDF), DBD silicon deposition (DBD-Si), atmospheric-pressure plasma jet fluorination (APPJ-F) and APPJ silicon deposition (APPJ-Si). By comparing the surface morphology, chemical components and electrical parameters, the diverse mechanisms of different plasma modification methods used to improve flashover performance are revealed. The results show that the flashover voltage of the DBDF samples is the largest (increased by 21.2% at most), while the APPJ-F method has the worst promotion effect. The flashover voltage of the APPJ-Si samples decreases sharply when treatment time exceeds 180 s, but the promotion effect outperforms the DBD-Si method during a short modified time. For the mechanism explanation, firstly, plasma fluorination improves the surface roughness and introduces shallow traps by etching the surface and grafting fluorine-containing groups, while plasma silicon deposition reduces the surface roughness and introduces a large number of shallow traps by coating SiO_x film. Furthermore, the reaction of the DBD method is more violent, while the homogeneity of the APPJ modification is better. These characteristics influence the effects of fluorination and silicon deposition. Finally, increasing the surface roughness and introducing shallow traps accelerates surface charge dissipation and inhibits flashover, but too many shallow traps greatly increase the dissipated rate and facilitate surface flashover instead
- surface charge,
- flashover voltage,
- dielectric barrier discharge,
- atmospheric-pressureplasma jet,
- plasma fluorination,
- plasma silicon deposition

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Improving the surface flashover performance of epoxy resin by plasma treatment: a comparison of fluorination and silicon deposition under different modes