Institute of Plasma Surface Interactions, Guizhou University, 550025, Guiyang, P. R. China
2.
College of science, Guizhou University, Guiyang 550025, China
3.
Key Laboratory of Radiation Physics and Technology, Ministry of Education; Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, P. R. China
4.
FOM Institute for Plasma Physics, 3439 MN Nieuwegein, The Netherlands
Funds: supported financially by Guizhou Province of China (No.:700968101) and International Thermonuclear Experimental Reactor (ITER) program special ( No. 2009GB104006)
Molecular dynamics simulations are performed to investigate CF3 continuously bombarding the amorphous silicon surface with energies of 10, 50, 100 and 150 eV at normal incidence and room temperature. The improved Tersoff-Brenner potentials were used. The simulation results show that the steady-state etching rates are about 0.019, 0.085 and 0.1701 for 50, 100 eV and 150eV, respectively. With increasing incident energy, a transition from C-rich surface to F-rich surface is observed. In the region modified by CF3, SiF and CF species are dominant.
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