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David BAILIE, Cormac HYLAND, Raj L SINGH, Steven WHITE, Gianluca SARRI, Francis P KEENAN, David RILEY, Steven J ROSE, Edward G HILL, Feilu WANG (王菲鹿), Dawei YUAN (袁大伟), Gang ZHAO (赵刚), Huigang WEI (魏会冈), Bo HAN (韩波), Baoqiang ZHU (朱宝强), Jianqiang ZHU (朱健强), Pengqian YANG (杨朋千). An investigation of the L-shell x-ray conversion efficiency for laser-irradiated tin foils[J]. Plasma Science and Technology, 2020, 22(4): 45201-045201. DOI: 10.1088/2058-6272/ab6188
Citation: David BAILIE, Cormac HYLAND, Raj L SINGH, Steven WHITE, Gianluca SARRI, Francis P KEENAN, David RILEY, Steven J ROSE, Edward G HILL, Feilu WANG (王菲鹿), Dawei YUAN (袁大伟), Gang ZHAO (赵刚), Huigang WEI (魏会冈), Bo HAN (韩波), Baoqiang ZHU (朱宝强), Jianqiang ZHU (朱健强), Pengqian YANG (杨朋千). An investigation of the L-shell x-ray conversion efficiency for laser-irradiated tin foils[J]. Plasma Science and Technology, 2020, 22(4): 45201-045201. DOI: 10.1088/2058-6272/ab6188

An investigation of the L-shell x-ray conversion efficiency for laser-irradiated tin foils

Funds: This work was supported by the UK Science and Technology Facilities Council, National Natural Science Foundation of China (No. 11573040) and Science Challenge Project (No. TZ2016005) and The Royal Society International Exchange (No. IE161039).
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  • Received Date: July 04, 2019
  • Revised Date: December 12, 2019
  • Accepted Date: December 12, 2019
  • We have used the Shenguang II laser in third harmonic (351 nm) to investigate the emission of L-shell radiation in the 3.3–4.4 keV range generated using thin foils of Sn coated onto a parylene substrate with irradiation of order 1015 Wcm−2 and nanosecond pulse duration. In our experiment, we have concentrated on assessing the emission on the non-laser irradiated side as this allows an experimental geometry relevant to experiments on photo-ionised plasmas where a secondary target must be placed close to the source, to achieve x-ray fluxes appropriate to astrophysical objects. Overall L-shell conversion efficiencies are estimated to be of order 1%, with little dependence on Sn thickness between 400 and 800 nm.
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