Simulations of Ion Behaviors in a Photoresist Trench During Plasma Etching Driven by a Radio-Frequency Source

DAI Zhongling(戴忠玲); YUE Guang(岳光); WANG Younian(王友年)

doi:10.1088/1009-0630/14/3/10

Plasma Science and Technology > 2012 > 14(3): 240-244. > DOI: 10.1088/1009-0630/14/3/10

DAI Zhongling(戴忠玲), YUE Guang(岳光), WANG Younian(王友年). Simulations of Ion Behaviors in a Photoresist Trench During Plasma Etching Driven by a Radio-Frequency Source[J]. Plasma Science and Technology, 2012, 14(3): 240-244. DOI: 10.1088/1009-0630/14/3/10

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Simulations of Ion Behaviors in a Photoresist Trench During Plasma Etching Driven by a Radio-Frequency Source

School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116023, China

Funds: Supported by National Natural Science Foundation of China (Nos 11075029 and 10975030), and the Important National Science and Technology Specific Project under Grant No 2011ZX02403-001

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Received Date: October 21, 2010

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Abstract

Abstract

Ion’s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency (rf) source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution (IED) at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.
- ion behavior,
- plasma sheath,
- Monte-Carlo,
- rf,
- photoresist trench

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