Effects of Annealing on the Structural and Photoluminescent Properties of Ag-Doped ZnO Nanowires Prepared by Ion Implantation

ZHAO Yong (赵勇); CHEN Xian (陈贤); FANG Liguang (方利广); YANG Lianfang (杨莲芳); et al.

doi:10.1088/1009-0630/15/8/19

Plasma Science and Technology > 2013 > 15(8): 817-820. > DOI: 10.1088/1009-0630/15/8/19

ZHAO Yong (赵勇), CHEN Xian (陈贤), FANG Liguang (方利广), YANG Lianfang (杨莲芳), et al.. Effects of Annealing on the Structural and Photoluminescent Properties of Ag-Doped ZnO Nanowires Prepared by Ion Implantation[J]. Plasma Science and Technology, 2013, 15(8): 817-820. DOI: 10.1088/1009-0630/15/8/19

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Effects of Annealing on the Structural and Photoluminescent Properties of Ag-Doped ZnO Nanowires Prepared by Ion Implantation

College of Science, Nanchang University, Nanchang 330031, China

Funds: supported by National Natural Science Foundation of China (No.11005059), and partially by the Science and Technology Project of Department of Education of Jiangxi Province, China (No.GJJ12119)

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Received Date: March 01, 2012

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Abstract

Abstract

ZnO nanowires deposited on Si substrates were prepared by thermal evaporation of a mixture of ZnO and carbon powder. Ag ions with an energy of 63 keV and a dose of 5×10 ¹⁵ ions/cm 2 were implanted into the as-prepared ZnO nanowires. After ion implantation, the Ag-implanted ZnO nanowires were annealed in air at different temperatures from 600 ^?C to 1000 ^?C. Effects of ion implantation and thermal annealing on the structural and photolumines- cent (PL) properties of the ZnO nanowires were investigated by transmission electron microscopy (TEM), selected area energy dispersive X-ray spectroscopy (SAEDX), X-ray diffraction (XRD), and fluorescence spectrophotometry. TEM, HR-TEM, and SAEDX analyses demonstrated that efficient doping of Ag was achieved by ion implantation and the subsequent annealing process. XRD patterns revealed that the hexagonal wurtzite structure of ZnO nanowires was maintained after ion implantation. Photoluminescent emissions of ZnO nanowires were decreased significantly by Ag implantation but could be recovered by thermal annealing. The mechanism of the influence of ion implantation and annealing on the PL intensity was assessed.
- ZnO nanowires,
- ion implantation,
- structure,
- photoluminescence

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